Datasheet4U Logo Datasheet4U.com

CMS-S060-060 - SCHOTTKY BARRIER DIODE

Features

  • :.
  • Extremely low forward volts.
  • Guard ring protection.
  • Low reverse leakage current Chip size(A): 1.524.
  • 1.524 mm 2 Bond Pad size(B) : 1.422.
  • 1.422 mm 2 A Thickness : 300µm ± 20µm Metalization : Anode Ti/Ni/Ag B Metalization : Cathode Ti/Ni/Ag Electrical Characteristics Sym. Spec. Limit Unit Maximum Instantaneous Forward Volt ° at IF : 3.0Amp. 25 C www. DataSheet4U. com VF max 0.70 Volt Minimum Instantaneous Reverse Voltage ° at IR : 300 uA 25 C VR min.

📥 Download Datasheet

Datasheet Details

Part number CMS-S060-060
Manufacturer Champion
File Size 46.73 KB
Description SCHOTTKY BARRIER DIODE
Datasheet download datasheet CMS-S060-060 Datasheet

📁 Similar Datasheet

  • CMS-S032-020 - SCHOTTKY BARRIER DIODE (Champion Microelectronic)
  • CMS-S032-040 - SCHOTTKY BARRIER DIODE (Champion Microelectronic)
  • CMS-S035-020 - SCHOTTKY BARRIER DIODE (Champion Microelectronic)
  • CMS-S035-040 - SCHOTTKY BARRIER DIODE (Champion Microelectronic)
  • CMS-S040-020 - SCHOTTKY BARRIER DIODE (Champion Microelectronic)
  • CMS-S040-040L - SCHOTTKY BARRIER DIODE (Champion Microelectronic)
  • CMS-181325-078S - SPEAKER (CUI)
  • CMS01 - Schottky Barrier Diode (Toshiba Semiconductor)
  • CMS02 - Switching Mode Power Supply Applications (Toshiba Semiconductor)
  • CMS03 - Schottky Barrier Rectifier (Toshiba Semiconductor)
Other Datasheets by Champion

Full PDF Text Transcription

Click to expand full text
CMS-S060-060 SCHOTTKY BARRIER DIODE Features : * Extremely low forward volts * Guard ring protection * Low reverse leakage current Chip size(A): 1.524* 1.524 mm 2 Bond Pad size(B) : 1.422 *1.422 mm 2 A Thickness : 300µm ± 20µm Metalization : Anode Ti/Ni/Ag B Metalization : Cathode Ti/Ni/Ag Electrical Characteristics Sym. Spec. Limit Unit Maximum Instantaneous Forward Volt ° at IF : 3.0Amp. 25 C www.DataSheet4U.com VF max 0.70 Volt Minimum Instantaneous Reverse Voltage ° at IR : 300 uA 25 C VR min. 63 Volt. Minimum Non-repetitive Peak Surge current at 25 C ° IFSM 80 Amp Storage Temperature TSTG -65 to +125 ° C HsinChu Headquarter 5F, No.
Published: |