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CMT02N60 Datasheet Preview

CMT02N60 Datasheet

Power MOSFET

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CMT02N60
POWER FIELD EFFECT TRANSISTOR
GENERAL DESCRIPTION
FEATURES
This high voltage MOSFET uses an advanced termination ‹
scheme to provide enhanced voltage-blocking capability ‹
without degrading performance over time. In addition, this ‹
advanced MOSFET is designed to withstand high energy in
avalanche and commutation modes. The new energy ‹
efficient design also offers a drain-to-source diode with a ‹
fast recovery time. Designed for high voltage, high speed
switching applications in power supplies, converters and
PWM motor controls, these devices are particularly well
suited for bridge circuits where diode speed and
commutating safe operating areas are critical and offer
additional and safety margin against unexpected voltage
transients.
Robust High Voltage Termination
Avalanche Energy Specified
Source-to-Drain Diode Recovery Time Comparable to a
Discrete Fast Recovery Diode
Diode is Characterized for Use in Bridge Circuits
IDSS and VDS(on) Specified at Elevated Temperature
PIN CONFIGURATION
TO-220/TO-220FP
Front View
TO-251
Front View
TO-252
Front View
SYMBOL
N-Channel MOSFET
D
G
12 3
S
123
ABSOLUTE MAXIMUM RATINGS
Rating
Drain to Current Continuous
Pulsed
Gate-to-Source Voltage Continue
Non-repetitive
Total Power Dissipation
TO-251
TO-220
TO-220FP
Operating and Storage Temperature Range
Single Pulse Drain-to-Source Avalanche Energy TJ = 25
(VDD = 100V, VGS = 10V, IL = 2A, L = 10mH, RG = 25)
Thermal Resistance Junction to Case
Junction to Ambient
Maximum Lead Temperature for Soldering Purposes, 1/8” from case for 10 seconds
Symbol
ID
IDM
VGS
VGSM
PD(Max)
TJ, TSTG
EAS
θJC
θJA
TL
Value
2.0
4.0
±20
±40
30
83
30
-55 to 150
20
1.0
62.5
260
Unit
A
V
V
W
mJ
/W
2010/12/21 Rev. 1.5
Champion Microelectronic Corporation
Page 1




Champion

CMT02N60 Datasheet Preview

CMT02N60 Datasheet

Power MOSFET

No Preview Available !

CMT02N60
POWER FIELD EFFECT TRANSISTOR
ORDERING INFORMATION
Part Number
Package
CMT02N60GN251*
TO-251
CMT02N60GN252*
TO-252
CMT02N60GN220*
TO-220
CMT02N60GN220FP*
TO-220 Full Package
CMT02N60XN251*
TO-251
CMT02N60XN252*
TO-252
CMT02N60XN220*
TO-220
CMT02N60XN220FP*
TO-220 Full Package
*Note: G : Suffix for Pb Free Product
X : Suffix for Halogen Free and PB Free Product
ELECTRICAL CHARACTERISTICS (Unless otherwise specified, TJ = 25.)
Characteristic
Drain-Source Breakdown Voltage
(VGS = 0 V, ID = 250 μA)
Drain-Source Leakage Current
(VDS = 600 V, VGS = 0 V)
(VDS = 480 V, VGS = 0 V, TJ = 125)
Gate-Source Leakage Current-Forward
(Vgsf = 30 V, VDS = 0 V)
Gate-Source Leakage Current-Reverse
(Vgsr = -30 V, VDS = 0 V)
Gate Threshold Voltage
(VDS = VGS, ID = 250 μA)
Static Drain-Source On-Resistance (VGS = 10 V, ID = 1.0A) *
Drain-Source On-Voltage (VGS = 10 V)
(ID = 2.0 A)
Forward Transconductance (VDS 50 V, ID = 1.0A) *
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
(VDS = 25 V, VGS = 0 V,
f = 1.0 MHz)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
(VDD = 300 V, ID = 2.0 A,
VGS = 10 V,
RG = 18) *
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
(VDS = 400 V, ID = 2.0 A,
VGS = 10 V)*
Internal Drain Inductance
(Measured from the drain lead 0.25” from package to center of die)
Internal Drain Inductance
(Measured from the source lead 0.25” from package to source bond
pad)
SOURCE-DRAIN DIODE CHARACTERISTICS
Forward On-Voltage(1)
Forward Turn-On Time
Reverse Recovery Time
(IS = 2.0 A, VGS = 0 V,
dIS/dt = 100A/μs)
* Pulse Test: Pulse Width 300μs, Duty Cycle 2%
** Negligible, Dominated by circuit inductance
Symbol
V(BR)DSS
IDSS
IGSSF
IGSSR
VGS(th)
RDS(on)
VDS(on)
gFS
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
LD
LS
VSD
ton
trr
CMT02N60
Min
Typ
Max
600
1
3
100
100
2.0
3.1
4.0
3.3
4.4
8.8
1.0
435
56
9.2
12
21
30
24
13
2.0
6.0
4.5
7.5
1.0
1.6
75
340
Units
V
uA
nA
nA
V
V
mhos
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
nH
nH
V
ns
ns
2010/12/21 Rev. 1.5
Champion Microelectronic Corporation
Page 2



Part Number CMT02N60
Description Power MOSFET
Maker Champion
Total Page 3 Pages
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