CMT07N60 Datasheet | Champion

DESCRIPTION FEATURES This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and mutation modes. The new energy efficient design also offers a drain-to-source diode with a fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and mutating safe operating areas are critical and offer additional and safety margin against unexpected voltage transients. Robust High Voltage Termination Avalanche Energy Specified Source-to-Drain Diode Recovery Time parable to a Discrete Fast Recovery Diode Diode is Characterized for Use in Bridge Circuits IDSS Specified at Elevated Temperature PIN CONFIGURATION TO-220/TO-220FP Front View SYMBOL GATE DRAIN SOURCE 12 3 N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS Rating Drain to Current － Continuous － Pulsed Gate-to-Source Voltage － Continue － Non-repetitive Total Power Dissipation TO-220 TO-220FP Operating and Storage Temperature Range Single Pulse Drain-to-Source Avalanche Energy － TJ = 25℃ (VDD = 100V, VGS = 10V, IL = 7A, L = 10m H, RG = 25Ω) Thermal Resistance － Junction to Case － Junction to Ambient Maximum Lead Temperature for Soldering Purposes, 1/8” from case for 10 seconds (1) VDD = 50V, ID = 10A (2) Pulse Width and frequency is limited by TJ(max) and thermal response Symbol ID IDM VGS VGSM PD TJ, TSTG EAS θJC θJA TL Value 7.0 20 ±20 ±40 147 50 -55 to 150 245 1.0 62.5 260 Unit A ℃ m J ℃/W ℃ 2003/06/19 Rev. 1.0 Champion Microelectronic Corporation Page 1 POWER FIELD EFFECT TRANSISTOR ORDERING INFORMATION Part Number CMT07N60 CMT07N60FP Package TO-220 TO-220 Full Pak ELECTRICAL CHARACTERISTICS...