CMT10N10 transistor equivalent, power field effect transistor.
! ! Avalanche Energy Specified Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode Diode is Characterized for Use in Bridge Circuits IDSS and.
in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits whe.
This advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient design also offers a drain-to-source diode with a fast recovery time. Designed for high voltage, high speed switching applications .
Image gallery
TAGS
Manufacturer
Related datasheet
Download (Size : 179.60KB)