Datasheet Details
| Part number | HS1010E |
|---|---|
| Manufacturer | Chengqi Semiconductor |
| File Size | 656.16 KB |
| Description | N-Channel MOSFET |
| Datasheet |
 HS1010E-ChengqiSemiconductor.pdf
|
| Part number | HS1010E |
|---|---|
| Manufacturer | Chengqi Semiconductor |
| File Size | 656.16 KB |
| Description | N-Channel MOSFET |
| Datasheet |
HS1010E-ChengqiSemiconductor.pdf
|
The HS1010E is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.This high density process is especially tailored to minimize on-state resistance. RDS(ON)≦9mΩ@VGS=10V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability VDS RDS(on) ID 60 9 85 V mΩ A 3. Pin configuration Order Number HS1010E Package TO-220 TO-220 Coperigh
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