CED16N10L Features
* 100V, 13.3A, RDS(ON) = 115mΩ @VGS = 10V. RDS(ON) = 125mΩ @VGS = 5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package. G G D CED16N10L/CEU16N10L PRELIMINARY D D G S CEU SERIES TO-252(D-PAK) S
CED16N10L, CED16N10L_Chino Datasheet
Datasheet Details
CED16N10L, CED16N10L_Chino
Chino-Excel Technology
690.75 KB
N-channel mosfet.
This datasheet PDF includes multiple part numbers: CED16N10L, CED16N10L_Chino.
Please refer to the document for exact specifications by model.
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