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CEM6608, CEM6608-Chino Datasheet - Chino-Excel Technology

CEM6608 Dual N-Channel Enhancement Mode Field Effect Transistor

CEM6608 Features

* 60V, 4A, RDS(ON) = 76mΩ @VGS = 10V. RDS(ON) = 100mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. Surface mount Package. D1 D1 D2 D2 876 5 SO-8 1 123 4 S1 G1 S2 G2 ABSOLUTE MAXIMUM RATINGS TA = 25 C

CEM6608, CEM6608-Chino Datasheet

This datasheet PDF includes multiple part numbers: CEM6608, CEM6608-Chino. Please refer to the document for exact specifications by model.
CEM6608 Datasheet Preview Page 2 CEM6608 Datasheet Preview Page 3

Datasheet Details

Part number:

CEM6608, CEM6608-Chino

Manufacturer:

Chino-Excel Technology

File Size:

306.64 KB

Description:

Dual n-channel enhancement mode field effect transistor.

This datasheet PDF includes multiple part numbers: CEM6608, CEM6608-Chino.
Please refer to the document for exact specifications by model.

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TAGS

CEM6608 CEM6608-Chino Dual N-Channel Enhancement Mode Field Effect Transistor Chino-Excel Technology

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