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MX2305 - P-Channel Power MOSFET

General Description

The MX2305 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gatevoltages as low as1.8V.

This device is suitable for use as a load switch or in PWM applications .It is ESD protected.

Key Features

  • VDS =-20V，ID =-4A RDS(ON)(Typ. ) < 38mΩ @ VGS=-4.5V Schematic diagram RDS(ON) (Typ. )< 54mΩ @ VGS=-2.5V ESD Rating: 2500V HBM High Power and current handing capability Lead free product is acquired k Surface mount package e.

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Datasheet Details

Part number MX2305
Manufacturer ChipSourceTek
File Size 0.99 MB
Description P-Channel Power MOSFET
Datasheet download datasheet MX2305 Datasheet

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Other Datasheets by ChipSourceTek

Part Number Description
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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P-Channel Enhancement Mode Power MOSFET Description The MX2305 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gatevoltages as low as1.8V. This device is suitable for use as a load switch or in PWM applications .It is ESD protected. MX2305 General Features VDS =-20V，ID =-4A RDS(ON)(Typ.) < 38mΩ @ VGS=-4.5V Schematic diagram RDS(ON) (Typ.)< 54mΩ @ VGS=-2.