MXN2508 - Dual N-Channel Power MOSFET

Product Overview

ChipSourceTek

Part number	MXN2508
Manufacturer	ChipSourceTek
File Size	814.57 KB
Description	Dual N-Channel Power MOSFET
Datasheet	MXN2508 Datasheet
Additional preview pages of the MXN2508 datasheet.

The MXN2508 uses advanced trench technology to provideexcellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

Schematic diagram.
VDS =20V，ID =8A @VGS=4.5V RDS(ON)(Typ. )=14mΩ @VGS=4.2V RDS(ON)(Typ. )=14.4mΩ @VGS=3.8V RDS(ON)(Typ. )=15.6mΩ @VGS=2.5V RDS(ON)(Typ. )=19mΩ ESD Rating: 2000V HBM.
Asvanced trench MOSFET process technology k.
Ultra low on-resistance with low gate charge.
New Thermally Enhanced DFN2X5-6L Package e.

📁 Similar Datasheet

Other Datasheets by ChipSourceTek

Published: Jan 7, 2024 |