MXN2512 Overview
The MXN2512 uses advanced trench technology to provideexcellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as aload switch or in PWM applications.it is ESD protected.
MXN2512 Key Features
- VDS =20V，ID =10A
- Asvanced trench MOSFET process technology k
- Ultra low on-resistance with low gate charge
- New Thermally Enhanced DFN5X2-6L Package