MXN2512 - Dual N-Channel Power MOSFET

Product Overview

ChipSourceTek

Part number	MXN2512
Manufacturer	ChipSourceTek
File Size	812.12 KB
Description	Dual N-Channel Power MOSFET
Datasheet	MXN2512 Datasheet
Additional preview pages of the MXN2512 datasheet.

The MXN2512 uses advanced trench technology to provideexcellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

Schematic diagram.
VDS =20V，ID =10A @VGS=4.5V RDS(ON)(Typ. )=7.2mΩ @VGS=4.2V RDS(ON)(Typ. )=7.4mΩ @VGS=3.8V RDS(ON)(Typ. )=8mΩ @VGS=2.5V RDS(ON)(Typ. )=10mΩ ESD Rating: 2000V HBM.
Asvanced trench MOSFET process technology k.
Ultra low on-resistance with low gate charge.
New Thermally Enhanced DFN5X2-6L Package e.

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Published: Jan 7, 2024 |