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MXN2512 - Dual N-Channel Power MOSFET

General Description

The MXN2512 uses advanced trench technology to provideexcellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

This device is suitable for use as aload switch or in PWM applications.it is ESD protected.

Key Features

  • Schematic diagram.
  • VDS =20V，ID =10A @VGS=4.5V RDS(ON)(Typ. )=7.2mΩ @VGS=4.2V RDS(ON)(Typ. )=7.4mΩ @VGS=3.8V RDS(ON)(Typ. )=8mΩ @VGS=2.5V RDS(ON)(Typ. )=10mΩ ESD Rating: 2000V HBM.
  • Asvanced trench MOSFET process technology k.
  • Ultra low on-resistance with low gate charge.
  • New Thermally Enhanced DFN5X2-6L Package e.

📥 Download Datasheet

Datasheet Details

Part number MXN2512
Manufacturer ChipSourceTek
File Size 812.12 KB
Description Dual N-Channel Power MOSFET
Datasheet download datasheet MXN2512 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Dual N-Channel Enhancement Mode Power MOSFET Description The MXN2512 uses advanced trench technology to provideexcellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as aload switch or in PWM applications.it is ESD protected. MXN2512 General Features Schematic diagram  VDS =20V，ID =10A @VGS=4.5V RDS(ON)(Typ.)=7.2mΩ @VGS=4.2V RDS(ON)(Typ.)=7.4mΩ @VGS=3.8V RDS(ON)(Typ.)=8mΩ @VGS=2.5V RDS(ON)(Typ.