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MXN3016M - N-Channel Power MOSFET

General Description

The MXN3016M uses advanced trench technology to provide excellent RDS(ON) and low gate charge .

Key Features

  • SchemSatic Schematic diagram.
  • VDS =30V，ID =45A.
  • @VGS=10V RDS(ON)(Typ. )=5mΩ.
  • @VGS=4.5V RDS(ON)(Typ. )=7mΩ k High density cell design for ultra low Rdson Fully characterized Avalanche voltage and current Good stability and uniformity with high EAS e Excellent package for good heat dissipation Special process technology for high ESD capability eT.

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Datasheet Details

Part number MXN3016M
Manufacturer ChipSourceTek
File Size 1.20 MB
Description N-Channel Power MOSFET
Datasheet download datasheet MXN3016M Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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N-Channel Enhancement Mode Power MOSFET Description The MXN3016M uses advanced trench technology to provide excellent RDS(ON) and low gate charge . This device can be used for a variety of applications MXN3016M General Features SchemSatic Schematic diagram  VDS =30V，ID =45A  @VGS=10V RDS(ON)(Typ.)=5mΩ  @VGS=4.5V RDS(ON)(Typ.