MXN30D12M Overview
The MXN30D12M uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications General.
MXN30D12M Key Features
- VDS =30V，ID =12A
- @VGS=4.5V RDS(ON)(Typ.)=14mΩ
- @VGS=2.5V RDS(ON)(Typ.)=18mΩ
- High density cell design fo ultra low Rdson
- Fully characterized Avalanche voltage and current