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MXN3347 - P-Channel Power MOSFET

General Description

The MXN3347 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages aslow as 4.5V.This device is suitable for use as a load switch or in PWM and a wide varieer applications.

Key Features

  • VDS =-30V，ID =-35A.
  • RDS(ON) (Typ. )= 9 m Ω @ VGS=-10V.
  • RDS(ON) (Typ. )= 13.5m Ω @ VGS=-4.5V k High Power and current handing capability e Lead free product is acquired T Surface mount package 3347 Marking and pin Assignment rce.

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Datasheet Details

Part number MXN3347
Manufacturer ChipSourceTek
File Size 1.13 MB
Description P-Channel Power MOSFET
Datasheet download datasheet MXN3347 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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P-Channel Enhancement Mode Power MOSFET Description The MXN3347 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages aslow as 4.5V.This device is suitable for use as a load switch or in PWM and a wide varieer applications. MXN3347 Schematic diagram General Features  VDS =-30V，ID =-35A  RDS(ON) (Typ.)= 9 m Ω @ VGS=-10V  RDS(ON) (Typ.)= 13.5m Ω @ VGS=-4.5V k High Power and current handing capability e Lead free product is acquired T Surface mount package 3347 Marking and pin Assignment rce Application PWM applications u Load switch Power management So PDFN3.3x3.