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PE0103A - N-Channel Power MOSFET

General Description

The PE0103A uses advanced trench technology to provide excellent RDS(ON) and low gate charge.

It can be used in a wide variety of applications.

Key Features

  • VDS = 100V, ID =2.5A RDS(ON) < 175mΩ @ VGS=10V Schematic diagram.
  • High Power and current handing capability.
  • Lead free product is acquired.
  • Surface Mount Package.

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Datasheet Details

Part number PE0103A
Manufacturer ChipSourceTek
File Size 1.45 MB
Description N-Channel Power MOSFET
Datasheet download datasheet PE0103A Datasheet

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Full PDF Text Transcription (Reference)

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PE0103A N-Channel Enhancement Mode Power MOSFET Description The PE0103A uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications. General Features ● VDS = 100V, ID =2.