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PE58120P - N-Channel Power MOSFET

General Description

The PE58120P uses deep trench technology to provide excellent RDS(ON) and low gate charge.

It can be used in a wide variety of applications.

Key Features

  • VDS = 85V, ID = 120 A RDS(ON) < 5.4mΩ @ VGS=10V Schematic diagram.
  • High Power and current handing capability.
  • Lead free product is acquired.
  • Surface Mount Package.

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Datasheet Details

Part number PE58120P
Manufacturer ChipSourceTek
File Size 1.57 MB
Description N-Channel Power MOSFET
Datasheet download datasheet PE58120P Datasheet

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Other Datasheets by ChipSourceTek

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PE58120G N-Channel Enhancement Mode Power MOSFET
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PE58200PA N-Channel Enhancement Mode Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PE58120P N-Channel Enhancement Mode Power MOSFET Description The PE58120P uses deep trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications. General Features ● VDS = 85V, ID = 120 A RDS(ON) < 5.