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PE8270M - N-Channel Power MOSFET

General Description

The PE8270M uses advanced trench technology to provide excellent RDS(ON) and low gate charge.

It can be used in a wide variety of applications.

Key Features

  • VDS = 18V, ID = 90A RDS(ON) < 4.2mΩ @ VGS=4.5V RDS(ON) < 4.5mΩ @ VGS=3.8V RDS(ON) < 6.5mΩ @ VGS=2.5V Schematic diagram.
  • High Power and current handing capability.
  • Lead free product is acquired.
  • Surface Mount Package.

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Datasheet Details

Part number PE8270M
Manufacturer ChipSourceTek
File Size 753.39 KB
Description N-Channel Power MOSFET
Datasheet download datasheet PE8270M Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PE8270M N-Channel Enhancement Mode Power MOSFET Description The PE8270M uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications. General Features ● VDS = 18V, ID = 90A RDS(ON) < 4.2mΩ @ VGS=4.5V RDS(ON) < 4.5mΩ @ VGS=3.8V RDS(ON) < 6.5mΩ @ VGS=2.5V Schematic diagram ● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package Application ● PWM applications k ● Load switch Marking and pin assignment rceTe PDFN3.3x3.