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PE8310DS - N-Channel Power MOSFET

General Description

The PE8310DS uses advanced trench technology to provide excellent RDS(ON) and low gate charge.

It can be used in a wide variety of applications.

Key Features

  • VDS = 30V, ID = 10A RDS(ON) < 11mΩ @ VGS=10V RDS(ON) < 16mΩ @ VGS=4.5V Schematic diagram.
  • High Power and current handing capability.
  • Lead free product is acquired.
  • Surface Mount Package.

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Datasheet Details

Part number PE8310DS
Manufacturer ChipSourceTek
File Size 711.28 KB
Description N-Channel Power MOSFET
Datasheet download datasheet PE8310DS Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PE8310DS N-Channel Enhancement Mode Power MOSFET Description The PE8310DS uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications. General Features ● VDS = 30V, ID = 10A RDS(ON) < 11mΩ @ VGS=10V RDS(ON) < 16mΩ @ VGS=4.