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CPC3703C Datasheet N-Channel Depletion-Mode Vertical DMOS FETs

Manufacturer: Clare

Overview: CPC3703C N-Channel Depletion-Mode Vertical DMOS FETs BVDSX/ BVDGX 250V RDS(ON) (max) 4.

Datasheet Details

Part number CPC3703C
Manufacturer Clare
File Size 147.81 KB
Description N-Channel Depletion-Mode Vertical DMOS FETs
Download CPC3703C Download (PDF)

General Description

The CPC3703C is an N-channel depletion mode field effect transistor (FET) that utilizes Clare’s proprietary third generation vertical DMOS process.

Third generation process realizes world class, high voltage MOSFET performance in an economical silicon gate process.

Our vertical DMOS process yields a robust device for high power applications with high input impedance.

Key Features

  • Depletion mode device offers low RDS(ON) at cold temperatures.
  • Low on resistance 4 ohms max. at 25oC.
  • High input impedance.
  • High breakdown voltage 250V.
  • Low VGS(off) voltage -1.6 to -3.9V.
  • Small package size SOT-89.

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