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CPC3730C Datasheet N-Channel FET

Manufacturer: Clare

Overview: BVDSX/ BVDGX 350V RDS(ON) (max) 30Ω IDSS (min) 140mA Package.

Datasheet Details

Part number CPC3730C
Manufacturer Clare
File Size 323.82 KB
Description N-Channel FET
Download CPC3730C Download (PDF)

General Description

The CPC3730C is an N-channel depletion mode field effect transistor (FET) that utilizes Clare’s proprietary third generation vertical DMOS process.

Third generation process realizes world class, high voltage MOSFET performance in an economical silicon gate process.

Our vertical DMOS process yields a robust device for high power applications with high input impedance.

Key Features

  • Depletion mode device offers low RDS(ON) at cold temperatures.
  • Low on resistance 30 ohms max. at 25ºC.
  • High input impedance.
  • High breakdown voltage 350V.
  • Low VGS(off) voltage -1.6 to -3.9V.
  • Small package size SOT-89.

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