CMP100N03/CMB100N03/CMI100N03
N-Ch 30V Fast Switching MOSFETs
Electrical Characteristics (TJ=25 , unless otherwise noted)
Symbol
Parameter
BVDSS Drain-Source Breakdown Voltage
BVDSS TJ BVDSS Temperature Coefficient
RDS(ON) Static Drain-Source On-Resistance2
VGS(th)
Gate Threshold Voltage
Conditions
VGS=0V , ID=250uA
Reference to 25 , ID=1mA
VGS=10V , ID=40A
VGS=4.5V , ID=40A
VGS=VDS , ID =250uA
Min.
30
---
2.7
---
1
Typ.
---
0.035
3
4
---
Max.
---
---
3.8
5.5
3
Unit
V
V/
m
V
IDSS
IGSS
gfs
Rg
Qg
Qgs
Qgd
Td(on)
Tr
Td(off)
Tf
Ciss
Coss
Crss
Drain-Source Leakage Current
Gate-Source Leakage Current
Forward Transconductance
Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VDS=30V , VGS=0V
VDS=30V , VGS=0V ,TC=125
VGS 20V , VDS=0V
VDS>ID(on) X RDS(on )max , ID=15A
VDS=0V , VGS=0V , f=1MHz
ID = 100A
VDD =24V
VGS =4.5V
V DD =15V
ID=40A
R G=4.7 Ω
VGS=4.5V
VDS=25V , VGS=0V , f=1MHz
--- ---
--- ---
1 uA
10
--- --- 100 nA
--- 50 ---
S
--- ---
4.7
--- 84 114
--- 21 --- nC
--- 36
---
--- 40
---
--- 112
--- 144
---
---
ns
--- 85
---
--- --- 4900
--- --- 1300 pF
--- ---
490
Diode Characteristics
Symbol
IS
ISM
VSD
Parameter
Continuous Source Current1
Pulsed Source Current2
Diode Forward Voltage2
Conditions
VG=VD=0V , Force Current
VGS=0V , IS=100A , TJ=25
Note :
1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width 300us , duty cycle 2%
3.The EAS data shows Max. rating . The test condition is VDD=25V,VGS=10V,L=0.1mH,IAS=56A
Min.
---
---
---
Typ.
---
---
---
Max.
100
320
1.5
Unit
A
A
V
2
