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CMD50N06B - N-Channel 60V MOSFET

General Description

The 50N06B combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON).

This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting.

Key Features

  • 50A,60V. RDS(ON)=0.013Ω@VGS=10V N-channel-Enhancement mode Low Threshold Drive 100% Avalanche Tested Green Device Available Absolute Maximum Ratings Product Summery BVDSS 60V RDSON 13m ID 50A.

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Datasheet Details

Part number CMD50N06B
Manufacturer Cmos
File Size 1.05 MB
Description N-Channel 60V MOSFET
Datasheet download datasheet CMD50N06B Datasheet

Full PDF Text Transcription for CMD50N06B (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for CMD50N06B. For precise diagrams, and layout, please refer to the original PDF.

CMD50N06B/CMU50N06B N-Channel 60V MOSFET General Description The 50N06B combines advanced trench MOSFET technology with a low resistance package to provide extremely low ...

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FET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting. Features 50A,60V.RDS(ON)=0.