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CMD50P03 - P-Channel 30-V (D-S) MOSFET

General Description

These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on)and to ensure minimal power loss and heat dissipation.

Key Features

  • Advanced high cell density Trench technology Fast switching speed Lower On-resistance 100% EAS Guaranteed Simple Drive Requirement Absolute Maximum Ratings Product Summery BVDSS -30V RDSON 8mΩ ID -50A.

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Datasheet Details

Part number CMD50P03
Manufacturer Cmos
File Size 0.98 MB
Description P-Channel 30-V (D-S) MOSFET
Datasheet download datasheet CMD50P03 Datasheet

Full PDF Text Transcription for CMD50P03 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for CMD50P03. For precise diagrams, and layout, please refer to the original PDF.

CMD50P03/CMU50P03 P-Channel 30-V (D-S) MOSFET General Description These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on)a...

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ETs utilize a high cell density trench process to provide low RDS(on)and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers,PCMCIA cards, cellular and cordless telephones.