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CMI150N03 Datasheet Preview

CMI150N03 Datasheet

N-Channel Enhancement Mode Field Effect Transistor

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CMP150N03/CMB150N03/CMI150N03
N-Channel Enhancement Mode Field Effect Transistor
General Description
Product Summery
The 150N03 is N-ch MOSFETs
with extreme high cell density ,
which provide excellent RDSON
and gate charge for most of the
synchronous buck converter
applications.
Features
Simple Drive Requirement
Fast Switching
Low On-Resistance
Absolute Maximum Ratings
G
DS
TO-220
(CMP150N03)
BVDSS
30V
RDSON
4.5m
ID
120A
Applications
HIGH CURRENT, HIGH SPEED SWITCHING
DC-DC & DC-AC CONVERTERS
MOTOR CONTROL, AUDIO AMPLIFIERS
SOLENOID AND RELAY DRIVERS
AUTOMOTIVE ENVIRONMENT
TO220 / TO263 / TO262 Pin Configuration
GD S
TO-263
(CMB150N03)
G DS
TO-262
(CMI150N03)
Symbol
VDS
VGS
ID@TC=25
IDM
EAS
PD
TSTG
TJ
Parameter
Drain-Source Voltage
Gate-Sou ce Voltage
Continuous Drain Current 1
Pulsed Drain Current2
Single Pulse Avalanche Energy3
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Rating
30
20
120
360
720
250
-55 to 175
-55 to 175
Units
V
V
A
A
mJ
W
Thermal Data
Symbol
R JA
R JC
Parameter
Thermal Resistance Junction-ambient
Thermal Resistance Junction-case
Typ.
---
---
Max.
62.5
0.5
Unit
/W
/W
1




Cmos

CMI150N03 Datasheet Preview

CMI150N03 Datasheet

N-Channel Enhancement Mode Field Effect Transistor

No Preview Available !

CMP150N03/CMB150N03/CMI150N03
N-Channel Enhancement Mode Field Effect Transistor
Electrical Characteristics (TJ=25 , unless otherwise noted)
Symbol
BVDSS
RDS(ON)
Parameter
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
VGS(th)
IDSS
Gate Threshold Voltage
Drain-Source Leakage Current
IGSS
gfs
Qg
Qgs
Qgd
Td(on)
Tr
Td(off)
Tf
Ciss
Coss
Crss
Gate-Source Leakage Current
Forward Transconductance 4
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Conditions
VGS=0V , ID=250uA
VGS=10V , ID=50A
VGS=VDS , ID =250uA
VDS=30V , VGS=0V
VDS=30V , VGS=0V ,TC=125
VGS 20V , VDS=0V
VDS=15V , ID=50A
ID = 120A
VDD =24V
VGS =10V
V DD =15V
ID = 60A
R G=4.7
VGS=10V
VDS=25V , VGS=0V , f=1MHz
Min.
30
---
Typ.
---
---
Max.
---
4.5
Unit
V
m
1 --- 3
V
--- --- 1
uA
--- --- 10
--- --- 100 nA
--- 150 ---
S
--- 95 135
--- 28 --- nC
--- 35
---
--- 30
---
--- 208
--- 82
---
---
ns
--- 45
---
--- 4600 ---
--- 980 ---
pF
--- 115 ---
Diode Characteristics
Symbol
IS
ISM
VSD
Parameter
Continuous Source Current
Pulsed Source Current2
Diode Forward Voltage4
Note :
1.Current Limited by Package
2.Pulse width limited by safe operating area
3.Starting Tj = 25°C, Id = 60A, VDD=30 V
4.Pulsed: pulse duration=300μs, duty cycle 1.5%
Conditions
VG=VD=0V , Force Current
VGS=0V , IS=120A
Min.
---
---
---
Typ.
---
---
---
Max.
120
360
1.3
Unit
A
A
V
2


Part Number CMI150N03
Description N-Channel Enhancement Mode Field Effect Transistor
Maker Cmos
Total Page 2 Pages
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