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CMN2300 - N-Channel Enhancement Mode Field Effect Transistor

General Description

These miniature surface mount MOSFETs utilize High Cell Density process.

Low rDS(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry.

Key Features

  • RDS(ON).

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Datasheet Details

Part number CMN2300
Manufacturer Cmos
File Size 878.72 KB
Description N-Channel Enhancement Mode Field Effect Transistor
Datasheet download datasheet CMN2300 Datasheet

Full PDF Text Transcription for CMN2300 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for CMN2300. For precise diagrams, and layout, please refer to the original PDF.

CMN2300 N-Channel Enhancement Mode Field Effect Transistor General Description These miniature surface mount MOSFETs utilize High Cell Density process. Low rDS(on) assure...

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ce mount MOSFETs utilize High Cell Density process. Low rDS(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry. Typical applications are DC-DC converters, power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. Features RDS(ON)<25mΩ @ VGS=4.5V RDS(ON)<35mΩ @ VGS=2.

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