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CDBD2SC21200-G Datasheet Preview

CDBD2SC21200-G Datasheet

Silicon Carbide Power Schottky Diode

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Silicon Carbide Power Schottky Diode
CDBD2SC21200-G
Reverse Voltage: 1200V
Forward Current: 2A
RoHS Device
Features
- Rated to 1200V at 2 Amps
- Short recovery time
- High speed switching possible
- High frequency operation.
- High temperature operation.
- Temperature independent switching behaviour.
- Positive temperature coefficient on VF
Circuit diagram
C(3)
C(1) A(2)
TO-263/D2PAK
0.402(10.20)
0.394(10.00)
3
0.051(1.30)
0.043(1.10)
0.346(8.80)
0.339(8.60)
12
0.205(5.20)
0.197(5.00)
0.049(1.25)
0.045(1.15)
0.037(0.95)
0.033(0.85)
0.063(1.60)
0.055(1.40)
0.185(4.70)
0.177(4.50)
0.054(1.37)
0.046(1.17)
0.107(2.72)
0.091(2.32)
0.019(0.47)
0.014(0.37)
Dimensions in inches and (millimeters)
Maximum Ratings (at TA=25°C, unless otherwise noted)
Parameter
Conditions
Repetitive peak reverse voltage
Surge peak reverse voltage
DC bolcking voltage
Continuous forward current
Repetitive peak forward surge current
Non-repetitive peak forward surge current
Power dissipation
TC = 25°C
TC = 135°C
TC = 155°C
Tc = 25°C, tp = 10ms
Half sine wave, D = 0.3
Tc = 25°C, tp = 10ms
Half sine wave
TC = 25°C
TC = 110°C
Typical thermal resistance
Junction to case
Operating junction temperature range
Storage temperature range
Symbol
VRRM
VRSM
VDC
IF
IFRM
IFSM
PTOT
RθJC
TJ
TSTG
Value
1200
1200
1200
6.2
3.2
2
15
35
53.2
23
2.82
-55 ~ +175
-55 ~ +175
Company reserves the right to improve product design , functions and reliability without notice.
QW-BSCXX
Comchip Technology CO., LTD.
Unit
V
V
V
A
A
A
W
°C/W
°C
°C
REV:
Page 1




Comchip

CDBD2SC21200-G Datasheet Preview

CDBD2SC21200-G Datasheet

Silicon Carbide Power Schottky Diode

No Preview Available !

Silicon Carbide Power Schottky Diode
Electrical Characteristics (at TA=25°C, unless otherwise noted)
Parameter
Conditions
Symbol Min.
Forward voltage
Reverse current
Total capacitive charge
Total capacitance
IF = 2A, Tj = 25°C
IF = 2A, Tj = 175°C
VR = 1200V, Tj = 25°C
VR = 1200V, Tj = 175°C
VR = 800V, Tj = 150°C
QC = VR C(V) dv
0
VR = 0V, Tj = 25°C, f = 1MHZ
VR = 400V, Tj = 25°C, f = 1MHZ
VR = 800V, Tj = 25°C, f = 1MHZ
VF
IR
QC
C
Typ.
1.62
2.8
20
30
12
136
12
11
Max.
1.7
3
100
200
150
13
12
Unit
V
μA
nC
pF
RATING AND CHARACTERISTIC CURVES (CDBD2SC21200-G)
Fig.1 - Forward Characteristics
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
Forward Voltage, VF (V)
Fig.2 - Reverse Characteristics
0.014
0.012
0.010
0.008
0.006
TJ=25°C
TJ=75°C
TJ=125°C
TJ=175°C
0.004
0.002
0
0 200 400 600 800 1000 1200 1400
Reverse Voltage, VR (V)
22
20
18
16
14
12
10
8
6
4
2
0
25
Fig.3 - Current Derating
10% Duty
30% Duty
50% Duty
70% Duty DC
50 75 100 125 150
Case Tempature, TC (°C)
175
Fig.4 - Capacitance VS. Reverse Voltage
160
140
120
100
80
60
40
20
0
0.01
0.1
1
10 100 1000
Reverse Voltage, VR (V)
Company reserves the right to improve product design , functions and reliability without notice.
QW-BSCXX
Comchip Technology CO., LTD.
REV:
Page 2


Part Number CDBD2SC21200-G
Description Silicon Carbide Power Schottky Diode
Maker Comchip
Total Page 2 Pages
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