CJM1206-G Description
MOSFET CJM1206-G (P-Channel ) RoHS Device chip SMD Diode Specialist V(BR)DSS -12V RDS(on)MAX 45mΩ @ -4.5V 60mΩ @ -2.5V 90mΩ @ -1.8V ID -6A.
CJM1206-G Key Features
- P-Channel -12V(D-S) power MOSFET
- Advanced trench MOSFET process technology
- Ultra low on-resistance with low gate charge
- Case: DFNEB2-2-6L-J, molded plastic
- 1. DRAIN
- 2. DRAIN
- 3. GATE
- 4. SOURCE
- 5. DRAIN
- 6. DRAIN