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GBU806-G Datasheet Preview

GBU806-G Datasheet

Glass Passivated Bridge Rectifiers

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Glass Passivated Bridge Rectifiers
GBU8005-G Thru. GBU810-G
Reverse Voltage: 50 to 1000V
Forward Current: 8.0A
RoHS Device
Features
-Surge overload rating -200 amperes peak.
-Ideal for printed circuit board.
-UL recognized file # E217139 R
Mechanical Data
-Epoxy: U/L 94V-0 rate flame retardant.
-Case: Molded plastic, GBU
-Mounting position: Any
-Weight: 3.91 gram (approx.).
GBU
Backside
0.437(11.1)
0.430(10.9)
0.874(22.2)
0.860(21.8)
0.752(19.1)
0.720(18.3)
0.073(1.85)
0.057(1.45)
0.161(4.1)
0.134(3.4)
0.126(3.2)*45°
Chamfer
0.139(3.53)
0.133(3.37)
0.232(5.90)
0.213(5.40)
0.401(10.2)
0.392(9.80)
0.720(18.29)
0.680(17.27)
0.047(1.2)
0.035(0.9)
0.210(5.3)
0.190(4.8)
0.210(5.3)
0.190(4.8)
0.210(5.3)
0.190(4.8)
0.100(2.54)
0.085(2.16)
0.080(2.03)
0.065(1.65)
0.106(2.7)
0.091(2.3)
0.022(0.56)
0.018(0.46)
Dimensions in inches and (millimeter)
Maximum ratings and electrical characteristics
Rating at 25°C ambient temperature unless otherwise specified.
Single phase, half wave ,60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Parameter
Symbol
GBU
8005-G
GBU
801-G
GBU
802-G
GBU
804-G
GBU
806-G
GBU
808-G
GBU
810-G
Unit
Maximum Recurrent Peak Reverse Voltage
VRRM
50
Maximum RMS Voltage
VRMS
35
Maximum DC Blocking Voltage
VDC 50
Maximum Average Forward (With heatsink Note2) I(AV)
Rectified Current @Tc=100°C (without hestsink)
Peak Forward Surage Current, 8.3ms Single
Half Sine-Wave Super Imposed
On Rated Load (JEDEC Method)
IFSM
Maximum Forward Voltage at 4.0A DC
Maximum DC Reverse Current
At Rate DC Blocking Voltage
I2 T Rating for Fusing(t<8.3ms)
@TJ=25°C
@TJ=125°C
VF
IR
I2t
Typical Junction Capacitandce Per Element
(Note 1)
CJ
Typical Thermal Resistance
RθJC
Operating Temperature Range
TJ
Storage Temperature Range
TSTG
Notes:
1. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
2. Device mounted on 75mm*75mm*1.6mm Cu plate heatsink.
100 200 400 600 800 1000 V
70 140 280 420 560 700 V
100 200 400 600 800 1000 V
8.0
A
2.9
200 A
1.0
10.0
500
166
60
2.2
-55 to +150
-55 to +150
V
μA
A2s
pF
°C/W
°C
°C
Company reserves the right to improve product design , functions and reliability without notice.
QW-BBR54
Comchip Technology CO., LTD.
REV: C
Page 1




Comchip

GBU806-G Datasheet Preview

GBU806-G Datasheet

Glass Passivated Bridge Rectifiers

No Preview Available !

Glass Passivated Bridge Rectifiers
Rating and Characteristics Curves (GBU8005-G Thru. GBU810-G)
Fig.1 - Forward Current Derating Curve
10.0
8.0
WITH HEAT SINK
6.0
WITHOUT HEAT SINK
4.0
2.0
SINGLE PHASE HALF WAVE 60Hz
RESISTIVE OR INDUCTIVE LOADS
0.0
0
50 100
Case Temperature, (°C)
150
Fig.2 - Maximum NON-Repetitive
Surge Current
200
150
100
50
0
1
PULSE WIDTH 8.3ms
SINGLE HALF-SINE-WAVE
(JEDEC METHOD)
10
Number Of Cycle At 60Hz
100
Fig.3 - Typical Junction Capacitance
1000
Fig.4 - Typical Forward Characteristics
10.0
100 1.0
10
TJ=25°OCC,f=1MHz
0
1 10
Reverse Voltage, (V)
100
0.1
TJ=25°OCC
Pulse width: 300us
0.01
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4
Instantaneous Forward Voltage, (V)
Fig.5 - Typical Reverse Characteristics
1000
100
TJ=125O°CC
TJ=100O°CC
10
TJ=50°OCC
1.0
TJ=25°OCC
0.1
0
20 40 60 80 100
Percent of Rated Peak Reverse Voltage, (%)
Company reserves the right to improve product design , functions and reliability without notice.
QW-BBR54
Comchip Technology CO., LTD.
REV: C
Page 2



Part Number GBU806-G
Description Glass Passivated Bridge Rectifiers
Maker Comchip
Total Page 3 Pages
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