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SB120-G - Leaded Schottky Barrier Rectifiers

Datasheet Summary

Features

  • -Low drop down voltage. -Metal-Semiconductor junction with guard ring -High surge current capability -Silicon epitaxial planar chips. -For use in low voltage, high efficiency inverters, free wheeling, and polarity protection.

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Datasheet preview – SB120-G

Datasheet Details

Part number SB120-G
Manufacturer Comchip
File Size 46.47 KB
Description Leaded Schottky Barrier Rectifiers
Datasheet download datasheet SB120-G Datasheet
Additional preview pages of the SB120-G datasheet.

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Other Datasheets by Comchip
  • SB1100-G - Leaded Schottky Barrier Rectifiers
  • SB140-G - Leaded Schottky Barrier Rectifiers
  • SB145-G - Leaded Schottky Barrier Rectifiers
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  • SB160-G - Leaded Schottky Barrier Rectifiers
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Full PDF Text Transcription

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Leaded Schottky Barrier Rectifiers SB120-G Thru. SB1100-G Voltage: 20 to 100 V Current: 1.0 A RoHS Device Features -Low drop down voltage. -Metal-Semiconductor junction with guard ring -High surge current capability -Silicon epitaxial planar chips. -For use in low voltage, high efficiency inverters, free wheeling, and polarity protection applications -Lead-free part, meet RoHS requirements. Comchip SMD Diode Specialist DO-41 .107(2.7) .080(2.0) 1.0(25.4) Min. .205(5.2) .160(4.1) Mechanical data -Epoxy: UL94-V0 rated flame retardant -Case: Molded plastic body DO-41 -Terminals: Solderable per MIL-STD-750 Method 2026 -Polarity: Color band denotes cathode end -Mounting Position: Any -Weight: 0.34grams .034(0.86) .028(0.70) 1.0(25.4) Min.
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