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Comchip Technology
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1N5820-G Datasheet Preview

1N5820-G Datasheet

(1N5820-G - 1N5822-G) Schottky Barrier Rectifier

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1N5820-G pdf
Schottky Barrier Rectifier
1N5820-G Thru. 1N5822-G
Forward Current: 3.0A
Reverse Voltage: 20 to 40V
RoHS Device
SMD Diodes Specialist
Features
-Fast switching.
-Low forward voltage, high current capability.
-Low power loss, high efficiency.
-High current surge capability.
-High temperature soldering guaranteed: 250OC/10
seconds, 0.375”(9.5mm) lead length at 5lbs.
(2.3kg) tension.
Mechanical data
www.DataSheet4U.com
-Case: Transfer molded plastic
-Epoxy: UL94V-0 rate flame retardant
-Polarity: Color band denotes cathode end
-Lead: Plated axial lead, solderable per MIL-STD-
202E method 208C
Mounting position: Any
-Weight: 0.042 ounces, 1.19gram
DO-27
1.0(25.4)
MIN.
0.052(1.3)
0.048(1.2)
0.375(9.5)
0.335(8.5)
1.0(25.4)
MIN.
0.220(5.6)
0.197(5.0)
Dimensions in inches and (millimeter)
Maximum Ratings and Electrical Characteristics
Ratings at 25OC ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load derate current by 20%.
Parameter
Symbol
1N5820-G
1N5821-G
Maximum repetitive peak reverse voltage
VRRM
20
30
Maximum RMS voltage
VRMS
14
21
Maximum DC blocking voltage
VDC 20
30
Maximum average forward rectified current
0.375"(9.5mm) lead length @TL=95OC
I ( AV)
3.0
Peak forward surge current, 8.3ms single half
sine-wave superimposed on rated load
(JEDEC method)
IFSM
80
Maximum forward voltage at
3.0A
9.4A
VF
0.475
0.850
0.500
0.900
Maximum reverse current
TA=25OC
at rated DC blocking voltage*1 TA=100OC
IR
2.0
20
Typical junction capacitance *2
CJ
250
Typical thermal resistance *3
RθJA
40
Operating temperature range
TJ
-55 to +125
Storage temperature range
TSTG
-55 to +125
NOTES:
1. Pulse test: 300μs pulse width, 1% duty cycle.
2. Measured at 1.0MHz and applied reverse voltage of 4.0Volts.
2. Thermal resistance from junction to ambient, P.C.B. Mounted with 0.375"(9.5mm) lead length
with 2.5”×2.5”(63.5×63.5mm) copper pads.
1N5822-G
40
28
40
0.525
0.950
Unit
V
V
V
A
A
V
mA
pF
OC/W
OC
OC
QW-BB016
REV:A
Page 1



Comchip Technology
Comchip Technology

1N5820-G Datasheet Preview

1N5820-G Datasheet

(1N5820-G - 1N5822-G) Schottky Barrier Rectifier

No Preview Available !

1N5820-G pdf
Schottky Barrier Rectifier
SMD Diodes Specialist
RATING AND CHARACTERISTIC CURVES (1N5820-G Thru. 1N5822-G)
Fig.1 Typical Forward Current Derating Curve
3.0
Fig.2 Maximum Non-repetitive Peak
Forward Surge Current
100
8.3mS single half sine-
wave (JEDEC Method)
50
2.0
1.0
Single phase
Half wave, 60Hz
Resistive or
inductive load
0.375"(9.5mm)
lead length
0
0 20
40 60 80 100
Lead Temperature (OC)
120
140
Fig.3 Typical Instantaneous Forward Characteristics
100
10
TJ=125OC
1.0
TJ=25OC
0.1
0 .0 1
0
Pulse width=300μs
1% duty cycle
0.2 0.4 0.6 0.8 1.0 1.2
Instantaneous Forward Voltage (V)
1.4
Fig.5 Typical Junction Capacitance
100
1 Cycle
10
0.1
10
Number of Cycles at 60Hz
100
Fig.4 Typical Reverse Characteristics
10
TJ=125OC
1
TJ=75OC
0.1
TJ=25OC
0 .0 1
0
20 40 60 80 100 120 140
Percent of Rated Peak Reverse Voltage (%)
10
TJ=25OC
f=1MHz
Vsig=50mV
1
0.1
1 10
Reverse Voltage (V)
100
QW-BB016
REV:A
Page 2


Part Number 1N5820-G
Description (1N5820-G - 1N5822-G) Schottky Barrier Rectifier
Maker Comchip Technology
Total Page 2 Pages
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