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Comchip Technology

CURA103-G Datasheet Preview

CURA103-G Datasheet

SMD Ultra Fast Recovery Rectifiers

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SMD Ultra Fast Reco ver y Rect ifier s
CURA101-G Thru. CURA107-G
Reverse Voltage: 50 to 1000 Volts
Forward Current: 1.0 Amp
RoHS Device
COMCHIP
SMD Diodes Specialist
Features
-Ideal for surface mount applications.
-Easy pick and place.
-Plastic package has Underwriters Lab.
flammability classification 94V-0.
-Ultra fast recovery time: 50~75nS.
-Low leakage current.
DO-214AC (SMA)
0.067(1.70)
0.051(1.29)
0.180(4.57)
0.160(4.06)
0.110(2.79)
0.086(2.18)
Mechanical data
-Case: JEDEC DO-214AC, molded plastic.
-Terminals: solderable per MIL-STD-750,
method 2026.
-Polarity: Color band denotes cathode end.
-Approx. weight: 0.063 grams
0.091(2.31)
0.067(1.70)
0.059(1.50)
0.035(0.89)
0.209(5.31)
0.185(4.70)
0.012(0.31)
0.006(0.15)
0.008(0.20)
0.004(0.10)
Dimensions in inches and (millimeter)
Maximum Ratings and Electrical Characteristics
Parameter
Max. repetitive peak reverse voltage
Symbol
CURA
101-G
VRRM
50
CURA
102-G
100
CURA
103-G
200
CURA
104-G
400
CURA
105-G
600
CURA
106-G
800
CURA
107-G
Units
1000 V
Max. DC blocking voltage
VDC 50 100 200 400 600 800 1000 V
Max. RMS voltage
VRMS 35 70 140 280 420 560 700 V
Peak surge forward current, 8.3ms
single half sine-wave superimposed
on rate load (JEDEC method)
IFSM
30 A
Max. average forward current
IO
1.0 A
Max. instantaneous forward voltage at
1.0A
VF
1.0 1.3 1.7 V
Reverse recovery time Trr 50
75 nS
Max. DC reverse current at TA=25OC
rated DC blocking voltage TA=100OC
www.DaMtaaSxh. teheetr4mUa.cl oremsistance (Note 1)
Max. operating junction temperature
IR
RθJL
TJ
5.0 μA
100
42 OC/W
150 OC
Storage temperature
TSTG
-55 to +150
OC
Notes: 1. Thermal resistance from junction to lead.
QW-BU001
Comchip Technology CO., LTD.
REV:A
Page 1




Comchip Technology

CURA103-G Datasheet Preview

CURA103-G Datasheet

SMD Ultra Fast Recovery Rectifiers

No Preview Available !

SMD Ultra Fast Reco ver y Rect ifier s
COMCHIP
SMD Diodes Specialist
RATING AND CHARACTERISTIC CURVES (CURA101-G thru CURA107-G)
Fig.1 Reverse Characteristics
1000
100
TJ=125OC
10
1 TJ=25OC
0.1
0
20 40 60 80 100 120 140
Percent of Rated Peak Reverse Voltage (%)
Fig.3 Junction Capacitance
140
120
100
80
60
40
20
0
0.01
TJ=25OC
f=1MHz and applied
4VDC reverse voltage
0.1 1 10
Reverse Voltage (V)
100
Fig.2 Forward Characteristics
100
10
1
0.1
0.01
0.4
TJ=25OC
Pulse width 300μS
4% duty cycle
0.8 1.2 1.6 2.0
Forward Voltage (V)
2.4
Fig.4 Non-repetitive Forward Surge Current
30
TJ=25OC
8.3ms single half sine
wave, JEDEC method
24
18
12
6
0
1 10 100
Number of Cycles at 60Hz
Fig.5 Test Circuit Diagram and Reverse Recovery Time Characteristics
50Ω
NONINDUCTIVE
10Ω
NONINDUCTIVE
+0.5A
(+)
25Vdc
(approx.)
(-)
D.U.T.
www.DataSheet4U.coNOmN-
INDUCTIVE
OSCILLLISCOPE
(NOTE 1)
(-)
PULSE
0
G E N E R ATO R
(NOTE 2) -0.25A
(+)
NOTES: 1. Rise time=7ns max., input impedance=1 MΩ, 22pF.
2. Rise time=10ns max., input impedance=50Ω.
-1.0A
trr
1cm
Set time base for
50 / 10nS / cm
Fig.6 Current Derating Curve
1.4
1.2
1.0
0.8
0.6
Single phase
0.4 Half wave 60Hz
0.2
0
0 25 50 75 100 125 150 175
Ambient Temperature (OC)
QW-BU001
Comchip Technology CO., LTD.
REV:A
Page 2


Part Number CURA103-G
Description SMD Ultra Fast Recovery Rectifiers
Maker Comchip Technology
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