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Comchip Technology

CURB207-G Datasheet Preview

CURB207-G Datasheet

SMD Ultra Fast Recovery Rectifiers

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SMD Ultra Fast Reco ver y Rect ifier s
CURB201-G Thru. CURB207-G
Reverse Voltage: 50 to 1000 Volts
Forward Current: 2.0 Amp
RoHS Device
COMCHIP
SMD Diodes Specialist
Features
-Ideal for surface mount applications.
-Easy pick and place.
-Plastic package has Underwriters Lab.
flammability classification 94V-0.
-Fast recovery time: 50~75nS.
-Low leakage current.
DO-214AA (SMB)
0.083(2.11)
0.075(1.91)
0.185(4.70)
0.160(4.06)
0.155(3.94)
0.130(3.30)
Mechanical data
-Case: JEDEC DO-214AA, molded plastic.
-Terminals: solderable per MIL-STD-750,
method 2026.
-Polarity: Color band denotes cathode end.
-Approx. weight: 0.093 grams
0.096(2.44)
0.083(2.13)
0.050(1.27)
0.030(0.76)
0.220(5.59)
0.200(5.08)
0.012(0.31)
0.006(0.15)
0.008(0.20)
0.004(0.10)
Dimensions in inches and (millimeter)
Maximum Ratings and Electrical Characteristics
Parameter
Max. repetitive peak reverse voltage
Symbol
CURB
201-G
VRRM
50
CURB
202-G
100
CURB
203-G
200
CURB
204-G
400
CURB
205-G
600
CURB
206-G
800
CURB
207-G
Units
1000 V
Max. DC blocking voltage
VDC 50 100 200 400 600 800 1000 V
Max. RMS voltage
VRMS 35 70 140 280 420 560 700 V
Peak surge forward current, 8.3ms
single half sine-wave superimposed
on rate load (JEDEC method)
IFSM
50 A
Max. average forward current
IO
2.0 A
Max. instantaneous forward voltage at
2.0A
VF
1.0 1.3 1.7 V
Reverse recovery time Trr 50
75 nS
Max. DC reverse current at TA=25OC
rated DC blocking voltage TA=125OC
www.DaMtaaSxh. teheetr4mUa.cl oremsistance (Note 1)
Max. operating junction temperature
IR
RθJL
TJ
5.0 μA
100
20 OC/W
150 OC
Storage temperature
TSTG
-55 to +150
OC
Notes: 1. Thermal resistance from junction to lead mounted on P.C.B. with 8.0×8.0 mm2 square (0.13mm thick) land area.
QW-BU003
Comchip Technology CO., LTD.
REV:A
Page 1




Comchip Technology

CURB207-G Datasheet Preview

CURB207-G Datasheet

SMD Ultra Fast Recovery Rectifiers

No Preview Available !

SMD Ultra Fast Reco ver y Rect ifier s
COMCHIP
SMD Diodes Specialist
RATING AND CHARACTERISTIC CURVES (CURB201-G thru CURB207-G)
Fig.1 Reverse Characteristics
1000
100
TJ=125OC
10
1 TJ=25OC
0.1
0
20 40
60 80 100 120 140
Percent of Rated Peak Reverse Voltage (%)
Fig.3 Junction Capacitance
200
100
TJ=25OC
f=1MHz
Vsig=50mVp-p
10
1
0.1
1
10 100
Reverse Voltage (V)
Fig.2 Forward Characteristics
10
CURB201-G~203-G
1
CURB204-G
0.1
0.01
CURB205-G~207-G
0.001
0
TJ=25OC
Pulse width 300μS
4% duty cycle
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
Forward Voltage (V)
Fig.4 Non-repetitive Forward Surge Current
60
TJ=25OC
50 8.3ms single half sine
wave, JEDEC method
40
30
20
10
0
1 10 100
Number of Cycles at 60Hz
Fig.5 Test Circuit Diagram and Reverse Recovery Time Characteristics
50Ω
NONINDUCTIVE
10Ω
NONINDUCTIVE
+0.5A
(+)
25Vdc
(approx.)
(-)
D.U.T.
www.DataSheet4U.coNOmN-
INDUCTIVE
OSCILLLISCOPE
(NOTE 1)
(-)
PULSE
0
G E N E R ATO R
(NOTE 2) -0.25A
(+)
NOTES: 1. Rise time=7ns max., input impedance=1 MΩ, 22pF.
2. Rise time=10ns max., input impedance=50Ω.
-1.0A
trr
1cm
Set time base for
50 / 10nS / cm
Fig.6 Current Derating Curve
2.8
2.4
2.0
1.6
1.2
Single phase
0.8 Half wave 60Hz
0.4
0
0 25 50 75 100 125 150 175
Ambient Temperature (OC)
QW-BU003
Comchip Technology CO., LTD.
REV:A
Page 2


Part Number CURB207-G
Description SMD Ultra Fast Recovery Rectifiers
Maker Comchip Technology
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CURB207-G Datasheet PDF






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