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Comchip Technology

CURC307-G Datasheet Preview

CURC307-G Datasheet

SMD Ultra Fast Recovery Rectifiers

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SMD Ultra Fast Reco ver y Rect ifier s
CURC301-G Thru. CURC307-G
Reverse Voltage: 50 to 1000 Volts
Forward Current: 3.0 Amp
RoHS Device
COMCHIP
SMD Diodes Specialist
Features
-Ideal for surface mount applications.
-Easy pick and place.
-Plastic package has Underwriters Lab.
flammability classification 94V-0.
-Fast recovery time: 50~75nS.
-Low leakage current.
DO-214AB (SMC)
0.124(3.15)
0.108(2.75)
0.280(7.11)
0.260(6.60)
0.245(6.22)
0.220(5.59)
Mechanical data
-Case: JEDEC DO-214AB, molded plastic.
-Terminals: solderable per MIL-STD-750,
method 2026.
-Polarity: Color band denotes cathode end.
-Approx. weight: 0.21 grams
0.103(2.62)
0.079(2.00)
0.050(1.27)
0.030(0.76)
0.320(8.13)
0.305(7.75)
0.012(0.31)
0.006(0.15)
0.008(0.20)
0.004(0.10)
Dimensions in inches and (millimeter)
Maximum Ratings and Electrical Characteristics
Parameter
Max. repetitive peak reverse voltage
Symbol
CURC
301-G
VRRM
50
CURC
302-G
100
CURC
303-G
200
CURC
304-G
400
CURC
305-G
600
CURC
306-G
800
CURC
307-G
Units
1000 V
Max. DC blocking voltage
VDC 50 100 200 400 600 800 1000 V
Max. RMS voltage
VRMS 35 70 140 280 420 560 700 V
Peak surge forward current, 8.3ms
single half sine-wave superimposed
on rate load (JEDEC method)
IFSM
100 A
Max. average forward current
IO
3.0 A
Max. instantaneous forward voltage at
3.0A
VF
1.0 1.3 1.7 V
Reverse recovery time Trr 50
75 nS
Max. DC reverse current at TA=25OC
rated DC blocking voltage TA=125OC
www.DaMtaaSxh. teheetr4mUa.cl oremsistance (Note 1)
Max. operating junction temperature
IR
RθJL
TJ
5.0 μA
150
20 OC/W
150 OC
Storage temperature
TSTG
-55 to +150
OC
Notes: 1. Thermal resistance from junction to lead mounted on P.C.B. with 8.0×8.0 mm2 square land area.
QW-BU004
Comchip Technology CO., LTD.
REV:A
Page 1




Comchip Technology

CURC307-G Datasheet Preview

CURC307-G Datasheet

SMD Ultra Fast Recovery Rectifiers

No Preview Available !

SMD Ultra Fast Reco ver y Rect ifier s
COMCHIP
SMD Diodes Specialist
RATING AND CHARACTERISTIC CURVES (CURC301-G thru CURC307-G)
Fig.1 Reverse Characteristics
1000
100
TJ=125OC
10
TJ=25OC
1
0.1
0 20 40 60 80 100 120 140
Percent of Rated Peak Reverse Voltage (%)
Fig.3 Junction Capacitance
200
100
10
1
0.1
TJ=25OC
f=1MHz
Vsig=50mVp-p
1 10
Reverse Voltage (V)
100
Fig.2 Forward Characteristics
100
10
CURC301-G~303-G
CURC304-G
1
CURC305-G~307-G
0.1
0.01
0
TJ=25OC
Pulse width 300μS
4% duty cycle
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
Forward Voltage (V)
Fig.4 Non-repetitive Forward Surge Current
100
80
TJ=25OC
8.3ms single half sine
wave, JEDEC method
60
40
20
0
1 10 100
Number of Cycles at 60Hz
Fig.5 Test Circuit Diagram and Reverse Recovery Time Characteristics
50Ω
NONINDUCTIVE
10Ω
NONINDUCTIVE
+0.5A
(+)
25Vdc
(approx.)
(-)
D.U.T.
www.DataSheet4U.coNOmN-
INDUCTIVE
OSCILLLISCOPE
(NOTE 1)
(-)
PULSE
0
G E N E R ATO R
(NOTE 2) -0.25A
(+)
NOTES: 1. Rise time=7ns max., input impedance=1 MΩ, 22pF.
2. Rise time=10ns max., input impedance=50Ω.
-1.0A
trr
1cm
Set time base for
50 / 10nS / cm
Fig.6 Current Derating Curve
3.5
3.0
2.5
2.0
1.5
Single phase
1.0 Half wave 60Hz
0.5
0
0 25 50 75 100 125 150 175
Ambient Temperature (OC)
QW-BU004
Comchip Technology CO., LTD.
REV:A
Page 2


Part Number CURC307-G
Description SMD Ultra Fast Recovery Rectifiers
Maker Comchip Technology
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CURC307-G Datasheet PDF






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