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Comset Semiconductor

2N3700 Datasheet Preview

2N3700 Datasheet

Silicon Planar Epitaxial Transistors

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NPN 2N3700
SILICON PLANAR EPITAXIAL TRANSISTORS
The 2N3700 are NPN transistors mounted in TO-18 metal package with the collector
connected to the case .
They are intended for small signal, low noise industrial applications.
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
VCEO
VCBO
VEBO
IC
PD
TJ
TStg
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
@ Tamb = 25°
@ Tcase= 25°www.DataSheet.net/
@ Tcase<100°
Storage Temperature range
Value
80
140
7
1
0.5
1.8
1
200
-65 to +200
Unit
V
V
V
A
W
°C
°C
THERMAL CHARACTERISTICS
Symbol
Ratings
RthJ-a
RthJ-c
Thermal Resistance, Junction-ambient
Thermal Resistance, Junction-case
Value
350
97
Unit
°C/ W
°C/ W
17/10/2012
COMSET SEMICONDUCTORS
1/3
Datasheet pdf - http://www.DataSheet4U.co.kr/




Comset Semiconductor

2N3700 Datasheet Preview

2N3700 Datasheet

Silicon Planar Epitaxial Transistors

No Preview Available !

NPN 2N3700
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
ICBO
ICBO
IEBO
VCEO (*)
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
Collector Emitter
Breakdown Voltage
VCB=90 V, IE=0V
VCB=90 V, IE=0V, Tj=150°C
VBE=5.0 V, IC=0
IC=30 mA, IB=0
VCBO
Collector Base
Breakdown Voltage
IC=100 µA, IE=0
VEBO
Emitter Base Breakdown
Voltage
IE=100 µA, IC=0
hFE (*)
DC Current Gain
VCE(SAT) (*)
Collector-Emitter
saturation Voltage
VBE(SAT) (*)
Base-Emitter saturation
Voltage
IC=0.1 mA, VCE=10 V
IC=10 mA, VCE=10 V
IC=150 mA, VCE=10 V
IC=500 mA, VCE=10 V
IC=1A, VCE=10 V
IC=150 mA, VCE=10 V
Tamb = -55° www.DataSheet.net/
IC=150 mA, IB=15 mA
IC=500 mA, IB=50 mA
IC=150 mA, IB=15 mA
fT
Transition frequency
IC=50 mA, VCE=10 V
f= 20MHz
hfe
Small signal current gain
IC=1 mA, VCE=5.0 V
f= 1 KHz
CCBO
Collector-Base
Capacitance
IE= 0 ,VCB=10 V
f = 1MHz
CEBO
Emitter-Base
Capacitance
IC= 0 ,VEB=0.5 V
f = 1MHz
rbb’,Cb’c
Feedback time constant
IC=10 mA, VCE=10 V
f= 4 MHz
(*) Pulse conditions : tp < 300 µs, δ =1%
Min Typ Max Unit
- - 10 nA
- - 10 µA
- - 10 nA
80 - - V
140 - - V
7-
50 -
90 -
100 -
50 -
15 -
40 -
--
--
--
-
-
-
300
-
-
-
0.2
0.5
1.1
V
-
V
- 100 - MHz
80 - 400 -
- 12 - pF
- 60 - pF
25 - 400 ps
17/10/2012
COMSET SEMICONDUCTORS
2|3
Datasheet pdf - http://www.DataSheet4U.co.kr/


Part Number 2N3700
Description Silicon Planar Epitaxial Transistors
Maker Comset Semiconductor
PDF Download

2N3700 Datasheet PDF






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