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Comset Semiconductors

2N6371 Datasheet Preview

2N6371 Datasheet

(2N6253 / 2N6254 / 2N6371) HIGH POWER SILICON NPN TRANSISTORS

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NPN 2N6253 – 2N6254 – 2N6371
HIGH POWER SILICON NPN TRANSISTORS
The 2N6253, 2N6254, and 2N6371 are silicon transistors are mounted in TO-3 metal
package.
Tey are intended for a wide variety of high-power applications. The construction of these
devices renders them highly resistant to second breakdown over a wide range of operating
conditions.
These devices differ in maximum ratings for voltage and power dissipation.
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
VCEO(SUS) Collector-Emitter Voltage
www.DataSheet.net/
VCBO
Collector-Base Voltage (*)
VCER(SUS)
Collector-Emitter Voltage
RBE=100
VCEV(SUS)
Collector-Emitter Voltage
VBE=-1.5V
VEBO
IC
IB
PTOT
TJ
TS
Emitter-Base Voltage
Collector Current
Base Current
Power Dissipation
Junction Temperature
Storage Temperature
< 25°C
> 25°C
Value
Unit
2N6253
2N6254
2N6371
2N6253
2N6254
2N6371
2N6253
2N6254
2N6371
2N6253
2N6254
2N6371
2N6253
2N6254
2N6371
2N6253
2N6254
2N6371
45
80 V
40
55
100 V
50
55
85 V
45
55
90 V
50
5
7V
5
15 A
7A
115
150 Watts
117
Derate Linearly to 200°C
-65 to +200
°C
09/11/2012
COMSET SEMICONDUCTORS
1|4
Datasheet pdf - http://www.DataSheet4U.co.kr/




Comset Semiconductors

2N6371 Datasheet Preview

2N6371 Datasheet

(2N6253 / 2N6254 / 2N6371) HIGH POWER SILICON NPN TRANSISTORS

No Preview Available !

NPN 2N6253 – 2N6254 – 2N6371
THERMAL CHARACTERISTICS
Symbol
Ratings
RthJ-C
Thermal Resistance, Junction to Case
2N6253
2N6254
2N6371
Value
1.5
1.17
1.5
Unit
°C/W
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
VCE(SAT)
ICEO
IEBO
ICEX
Collector-Emitter Voltage (*)
Collector-Emitter Cutoff
Current
Emitter-Base Cutoff Current
Collector Cutoff Current
IC=3 A, IB=0.3 A
IC=15 A, IB=5 A
IC=5 A, IB=0.5 A
I =15 A, I =3 AC
Bwww.DataSheet.net/
IC=8 A, IB=0.8 A
IC=16 A, IB=4 A
VCE=25 V
VCE=60 V
VEB=-5 V
VEB=-7 V
VCE=40 V
VBE=-1.5 V
VCE=50 V
VBE=-1.5 V
VCE=100 V
VBE=1.5 V
VCE=45 V
VBE=-1.5 V
VCE=55 V
VBE=-1.5 V
VCE=100 V
VBE=1.5 V
2N6253
2N6254
2N6371
2N6253
2N6371
2N6254
2N6253
2N6371
2N6254
2N6371
2N6253
2N6254
2N6371
2N6253
2N6254
Min
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Max Unit
1
4
0.5
4
V
1.5
4
1.5 mA
1.0
10 mA
0.5
10
10
5.0
mA
2.0
2.0
0.5
09/11/2012
COMSET SEMICONDUCTORS
2|4
Datasheet pdf - http://www.DataSheet4U.co.kr/


Part Number 2N6371
Description (2N6253 / 2N6254 / 2N6371) HIGH POWER SILICON NPN TRANSISTORS
Maker Comset Semiconductors
PDF Download

2N6371 Datasheet PDF






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