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2N6371 - HIGH POWER SILICON NPN TRANSISTORS

Download the 2N6371 datasheet PDF. This datasheet also covers the 2N6253 variant, as both devices belong to the same high power silicon npn transistors family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (2N6253_ComsetSemiconductors.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number 2N6371
Manufacturer Comset Semiconductors
File Size 138.81 KB
Description HIGH POWER SILICON NPN TRANSISTORS
Datasheet download datasheet 2N6371 Datasheet

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Other Datasheets by Comset Semiconductors

Part Number Description
2N6050 POWER COMPLEMENTARY SILICON TRANSISTORS
2N6051 POWER COMPLEMENTARY SILICON TRANSISTORS
2N6052 POWER COMPLEMENTARY SILICON TRANSISTORS
2N6053 POWER COMPLEMENTARY Silicon TRANSISTORS
2N6055 POWER COMPLEMENTARY Silicon TRANSISTORS

Full PDF Text Transcription

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NPN 2N6253 – 2N6254 – 2N6371 HIGH POWER SILICON NPN TRANSISTORS The 2N6253, 2N6254, and 2N6371 are silicon transistors are mounted in TO-3 metal package. Tey are intended for a wide variety of high-power applications. The construction of these devices renders them highly resistant to second breakdown over a wide range of operating conditions. These devices differ in maximum ratings for voltage and power dissipation. Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol VCEO(SUS) Collector-Emitter Voltage Ratings 2N6253 2N6254 2N6371 2N6253 2N6254 2N6371 2N6253 2N6254 2N6371 2N6253 2N6254 2N6371 2N6253 2N6254 2N6371 Value Unit www.DataSheet.net/ VCBO Collector-Base Voltage (*) Collector-Emitter Voltage RBE=100Ω Collector-Emitter Voltage VBE=-1.
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