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Comset Semiconductors

BC160 Datasheet Preview

BC160 Datasheet

(BC160 / BC161) GENERAL PURPOSE TRANSISTORS

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PNP BC160 – BC161
GENERAL PURPOSE TRANSISTORS
They are silicon planar epitaxial PNP transistors mounted in TO-39 metal package.
They are particulary designed for audio amplifiers and switching applications up to 1A.
NPN complements are the BC140 – BC141.
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
-VCBO
-VCEO
-VEBO
-IC
Collector-Base Voltage
IE = 0
Collector-Emitter Voltage
IB = 0
Emitter-Base Voltage
IC = 0
Collector Current
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-IB Base Current
Ptot
Total Power
Dissipation
@ Tcase= < 45°
@ Tamb= < 4
TJ Junction Temperature
TStg Storage Temperature range
THERMAL CHARACTERISTICS
Symbol
Ratings
RthJ-c
RthJ-amb
Thermal Resistance, Junction-case
Thermal Resistance, Junction-ambient
Value
BC160
BC161
BC160
BC161
BC160
BC161
BC160
BC161
BC160
BC161
40
60
40
60
5
1
0.1
3.7
0.65
175
-55 to +175
Unit
V
V
V
A
A
W
°C
°C
Value
35
200
Unit
K/ W
K/ W
COMSET SEMICONDUCTORS
1/3
Datasheet pdf - http://www.DataSheet4U.co.kr/




Comset Semiconductors

BC160 Datasheet Preview

BC160 Datasheet

(BC160 / BC161) GENERAL PURPOSE TRANSISTORS

No Preview Available !

PNP BC160 – BC161
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
Min Typ Max Unit
-ICES
Collector – Cutoff
Current
IE= 0 ;VCES= 40 V
IE= 0 ;VCES= 60 V
IE= 0 ; V
VCES=40 V
Tamb = 150°c VCES=60 V
BC160
BC161
BC160
BC161
-
-
- 100 nA
- 100 µA
-VCB0
Collector – Base
-IC = 100 µA
Breakdown Voltage IE= 0
BC160 40
BC161 60
-
-
-
-
V
-VCE0 (*)
Collector – Emitter
Breakdown Voltage
-IC = 10 mA
IB= 0
BC160 40
BC161 60
-
-
-
-
V
-VEB0
Emitter – Base
-IE= 100 µA
Breakdown Voltage IC= 0
BC160
BC161
5
-
-
V
-VCE(SAT) Collector-Emitter
(*) saturation Voltage
-IC= 100 mA , -IB= 10 mA
-IC= 500 mA , -IB= 50 mA
-IC= 1 A, -IB= 100 mA
- 0.1
- 0.35
- 0.6 1
V
-VBE (*)
Base-Emitter Voltage -I = 1 A , -V = 1VC
CE
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-IC= 100 µA , -VCE= 1 V
Gr 10
Gr 16
1 1.7
- 80 -
- 120 -
hFE (*)
DC Current Gain
-IC= 100 mA , -VCE= 1 V
Gr 10
Gr 16
63 100 160
100 160 250
-
-IC= 1 A , -VCE= 1 V
Gr 10 - 20 -
Gr 16 - 30 -
fT
CCBO
Transition Frequency -IC= 50 mA , -VCE= 10 V
Collector – base
IE= 0 ; -VCB= 20V
Capacitance
f = 1 MHZ
50 -
- MHZ
- 15 30 pF
toff
Turn-off times
-IC=100 mA
-IB1=-IB2=5 mA
- - 650 ns
ton
Turn-on times
-IC=100 Ma
-IB1=1 mA
- - 500 ns
(*) Pulsed : pulse duration = 300µs, duty cycle = 1%
18/10/2012
COMSET SEMICONDUCTORS
2/3
Datasheet pdf - http://www.DataSheet4U.co.kr/


Part Number BC160
Description (BC160 / BC161) GENERAL PURPOSE TRANSISTORS
Maker Comset Semiconductors
Total Page 3 Pages
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BC160 Datasheet PDF

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