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BD909. For precise diagrams, and layout, please refer to the original PDF.
SEMICONDUCTORS BD909 – BD911 SILICON POWER TRANSISTORS The BD909 and DB911, are silicon epitaxial-base NPN power transistors in a TO-220 envelope. They are intended for u...
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se NPN power transistors in a TO-220 envelope. They are intended for use in power linear and switching applications. Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol VCBO VCEO VEBO IC IE IB Pt Tj Tstg Ratings Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Emitter Current Base Current Power Dissipation Junction Temperature Storage Temperature range IE = 0 IB = 0 IC = 0 Value BD909 80 80 BD911 100 100 Unit V V V A A A W °C www.DataSheet.net/ 5 15 15 5 90 150 -65 to 150 Limiting values in accordance with the Absolute Maximum System (IEC 134) THERMAL CHARACTERISTICS Symbol RthJ-mb Ra
BD909 Datasheet
