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Comset Semiconductors

BT152-600R Datasheet Preview

BT152-600R Datasheet

THYRISTORS

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SEMICONDUCTORS
BT152 Series
THYRISTORS
FEATURE
Glass passivated thyristors in a plastic TO220 package.
They are intended for use in applications requiring high
bidirectional blocking voltage capability and high thermal
cycling performance.
Typical applications include motor control, industrial and
domestic lighting, heating and static switching.
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
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Value
VDRM
VRRM
IT(RMS)
IT(AV)
ITSM
PGM
PG(AV)
Tstg
Tj
Repetitive peak off-state
voltage
Repetitive peak reverse
voltage
RMS on-state current
BT152-400R BT152-600R BT152-800R
450 650 800
450 650 800
20
Average on-state current
Non-repetitive peak on-
state current
Peak gate power
13
200
20
Average gate power
Storage temperature range
Operating junction
temperature
0.5
-40 to +150
125
Unit
V
A
A
A
W
W
°C
°C
THERMAL CHARACTERISTICS
Symbol
Ratings
Rj-mb
RJA
Thermal resistance junction to mounting base
Thermal resistance junction to ambient
26/09/2012
COMSET SEMICONDUCTORS
Value
1.1
60
Unit
°C/W
1|3
datasheet pdf - http://www.DataSheet4U.net/




Comset Semiconductors

BT152-600R Datasheet Preview

BT152-600R Datasheet

THYRISTORS

No Preview Available !

SEMICONDUCTORS
BT152 Series
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
VDRM
VRRM
IGT
VGT
IL
IH
ID
IR
VT
Repetitive peak
off-state voltage
Repetitive peak reverse
voltage
Gate trigger current
Gate trigger voltage
Latching current
Holding current
Off-state current
Reverse current
On-state voltage
BT152-400R
BT152-600R
BT152-800R
BT152-400R
BT152-600R
BT152-800R
VD = 12 V; IT = 100 mA
VD = 12 V; IT = 100 mA
VD = 12 V; IGT = 100 mA
VD = 12 V; IGT = 100 mA
VD = VDRM max; Tj = 125°C
VR = VRRM max; Tj = 125°C
IT = 40 A
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Min
450
650
800
450
650
800
-
-
-
-
-
-
-
Typ Max Unit
--
--
-
-
-
-
V
--
--
- 32 mA
- 1.5 V
- 80 mA
- 60 mA
- 1 mA
- 1 mA
- 1.75 V
DYNAMIC CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
dVD/dt
tgt
Critical rate of rise of
off-state voltage
Gate controlled
turn-on time
tq
Circuit commutated
Turn-off time
Test Condition(s)
VDM = 67% VDRMmax
Tj = 125°C
Exponential waveform; gate
open circuit
ITM = 40 A; VD = VDRMmax
IG = 0.1 A; dIG/dt = 5 A/µs
VDM = 67% VDRMmax
Tj = 125°C
ITM = 50 A; VR = 25 V
RGK = 100
dITM/dt = 30 A/µs
dVD/dt = 50 V/µS
Min Typ Max Unit
200 300
- V/µs
- 2 - µs
- 70 - µs
26/09/2012
COMSET SEMICONDUCTORS
2|3
datasheet pdf - http://www.DataSheet4U.net/


Part Number BT152-600R
Description THYRISTORS
Maker Comset Semiconductors
PDF Download

BT152-600R Datasheet PDF






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