BUX12
NPN BUX12 HIGH CURRENT, HIGH SPEED , HIGH POWER TRANSISTOR
The BUX12 is silicon multiepitaxial planar NPN transistors in Jedec TO-3. They are intended for use in switching and linear appications in military and industrial equipment. pliance to Ro HS
ABSOLUTE MAXIMUM RATINGS
Symbol VCEO VCBO VEBO VCEX IC ICM IB Pt TJ TStg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector-Emitter Voltage Collector Current Collector Peak Current Base Current Total Power Dissipation Junction Temperature Storage Temperature IB = 0 IE = 0 IC = 0 VBE = -1.5V
.Data Sheet.net/
Unit 250 300 7.0 300 20 25 4 150 200 -65 to +200 V V V V A A A W °C °C tp = 10ms @ TC = 25°
THERMAL CHARACTERISTICS Symbol
Rth JC
Ratings
Thermal Resistance, Junction to Case
Value
Unit
°C/W
SET SEMICONDUCTORS
1/3
Datasheet pdf
- http://..co.kr/
NPN BUX12
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
VCEO(SUS) VEB0(SUS) ICEO ICEX IEBO h FE VCE(SAT) VBE(SAT) IS/B ES/B f T ton ts...
