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Comset Semiconductors
Comset Semiconductors

BUZ74 Datasheet Preview

BUZ74 Datasheet

N-Channel Enhancement Mode Power MOS Transistors

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BUZ74 pdf
SEMICONDUCTORS
BUZ74
N CHANNEL ENHANCEMENT MODE
POWER MOS TRANSISTORS
FEATURE
N channel in a plastic TO220 package.
They are intended for use in switched mode power supplies,
motor control, welding,
DC-DC & DC-AC converters, and in general purpose
switching applications.
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
http://www.DataSheet4U.net/
Value
VDS
IDS
IDM
IAR
EAS
EAR
VGS
RDS(on)
PT
tJ
tstg
Drain-Source Voltage
Continuous Drain Current TC= 37°C
Pulsed Drain Current TC= 25°C
Avalanche Current, Limited by Tjmax
Avalanche Energy, Single pulse
ID = 2.4 A, VDD = 50 V, RGS = 25 , L= 56.3 µH, Tj = 25°C
Avalanche Energy, Periodic Limited by Tjmax
Gate-Source Voltage
Drain-Source on Resistance
Power Dissipation at Case Temperature TC= 25°C
Operating Temperature
Storage Temperature range
500
2.4
9.5
2.4
180
5
20
3
40
-55 to +150
-55 to +150
THERMAL CHARACTERISTICS
Symbol
Ratings
RthJC
RthJA
Thermal Resistance, junction-case
Thermal Resistance, junction-ambient
Value
3.1
75
Unit
V
A
mJ
V
W
°C
Unit
K/W
01/10/2012
COMSET SEMICONDUCTORS
1/4
datasheet pdf - http://www.DataSheet4U.net/



Comset Semiconductors
Comset Semiconductors

BUZ74 Datasheet Preview

BUZ74 Datasheet

N-Channel Enhancement Mode Power MOS Transistors

No Preview Available !

BUZ74 pdf
SEMICONDUCTORS
BUZ74
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s) Min Typ Max Unit
VDSS
VGS(th)
IDSS
IGSS
RDS(on)
Drain-Source Breakdown
Voltage
ID= 250 µA, VGS= 0 V 500
-
-V
Gate-threshold Voltage
ID=1 mA, VGS= VDS
2.1 3 4 V
Zero Gate Voltage Drain
Current
VDS= 500 V, VGS= 0 V
Tj= 25 °C
VDS= 500 V, VGS= 0 V
Tj= 125 °C
- -1
µA
- - 100
Gate-Source leakage Current VGS= 20 V, VDS= 0 V
- - 100 nA
Drain-Source on Resistance ID= 1.5 A, VGS= 10 V
- 2.5 3
DYNAMIC CHARACTERISTICS
Symbol
Ratings
gfs
CISS
COSS
CRSS
td(on)
tr
td(off)
tf
Transconductance
Input Capacitance
Output Capacitance
Reverse transfer Capacitance
Turn-on Delay Time
Rise time
Turn-off Delay Time
Fall Time
Test Condition(s)
http://www.DataSheet4U.net/
VDS = 2*ID*RDS(on)max
ID= 1.5 A
VGS= 0 V, VDS= 25 V
f= 1MHz
VDD= 30 V, VGS= 10 V
ID= 2.1 A, RGS= 50
REVERSE DIODE
Min Typ Max Unit
1.8 2.1 -
S
- 450 675
- 50 75 pF
- 20 30
- 8 12
-
-
40
50
60
65
ns
- 30 40
Symbol
Ratings
Test Condition(s)
IS
Inverse Diode Continuous
Forward Current.
TC = 25°C
ISM
Inverse diode direct current,
pulsed.
TC = 25°C
VSD Inverse Diode Forward voltage VGS = 0 V, IF = 4.8 A
Trr Reverse Recovery Time VR = 100 V, IF = 2.4 A
Qrr
Reverse Recovery Charge
di/dt = 100 A/µs
Min Typ Max Unit
- - 2.4
A
- - 9.5
- 1 1.3 V
- 300 - ns
- 2.5 - µC
01/10/2012
COMSET SEMICONDUCTORS
2/4
datasheet pdf - http://www.DataSheet4U.net/


Part Number BUZ74
Description N-Channel Enhancement Mode Power MOS Transistors
Maker Comset Semiconductors
Total Page 4 Pages
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BUZ74 pdf
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