Datasheet Details
| Part number | TIC206N |
|---|---|
| Manufacturer | Comset Semiconductors |
| File Size | 215.12 KB |
| Description | (TIC206x) SILICON BIDIRECTIONAL TRIODE THYRISTOR |
| Download | TIC206N Download (PDF) |
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Download the TIC206N datasheet PDF. This datasheet also includes the TIC206A variant, as both parts are published together in a single manufacturer document.
| Part number | TIC206N |
|---|---|
| Manufacturer | Comset Semiconductors |
| File Size | 215.12 KB |
| Description | (TIC206x) SILICON BIDIRECTIONAL TRIODE THYRISTOR |
| Download | TIC206N Download (PDF) |
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This device is a bidirectional triode thyristor (triac) which may be triggered from the off-state to the on-state by either polarity of gate signal with main Terminal 2 at either polarity.
ABSOLUTE MAXIMUM RATINGS http://www.DataSheet4U.net/ Symbol VDRM IT(RMS) ITSM ITSM IGM PGM PG(AV) TC Tstg TL Ratings A Repetitive peak off-state voltage (see Note1) Full-cycle RMS on-state current at (or below) 70°C case temperature (see note2) Peak on-state surge current full-sine-wave (see Note3) Peak on-state surge current half-sine-wave (see Note4) Peak gate current Peak gate power dissipation at (or below) 85°C case temperature (pulse width ≤200 µs) Average gate power dissipation at (or below) 85°C case (see Note5) Operating case temperature range Storage temperature range Lead temperature 1.6 mm from case for 10 seconds Value B D M S N Unit 100 200 400 600 700 800 4 25 30 ± 0.2 1.3 0.3 -40 to +110 -40 to +125 230 V A A A A W W °C °C °C 30/10/2012 COMSET SEMICONDUCTORS 1|4 datasheet pdf - http://www.DataSheet4U.net/ SEMICONDUCTORS TIC206A, TIC206B, TIC206D, TIC206M, TIC206N, TIC206S THERMAL CHARACTERISTICS Symbol R∂JC R∂JA Ratings Junction to case thermal resistance Junction to free air thermal resistance Value ≤ 7.8 ≤ 62.5 Unit °C/W ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol IDRM Ratings Repetitive peak off-state current Gate trigger current Test Condition(s) VD = Rated VDRM, , IG = 0 TC = 110°C Vsupply = +12 V†, RL = 10 Ω, tp(g) = > 20 µs Vsupply = +12 V†, RL = 10 Ω, tp(g) = > 20 µs Vsupply = -12 V†, RL = 10 Ω, tp(g) = > 20 µs Vsupply = -12 V†, RL = 10 Ω, tp(g) = > 20 µs Vsupply = +12 V†, RL = 10 Ω, tp(g) = > 20 µs Vsupply = +12 V†, RL = 10 Ω, tp(g) = > 20 µs Vsupply
SEMICONDUCTORS TIC206A, TIC206B, TIC206D, TIC206M, TIC206N, TIC206S SILICON BIDIRECTIONAL TRIODE THYRISTOR • • • • • • 4 A RMS Glass Passivated Wafer 100 V to 800 V Off-State Voltage Max IGT of 5 mA (Quadrants 1-3).
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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TIC206 | SILICON TRIACS | Power Innovations Limited |
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TIC206D | Triacs | Inchange Semiconductor |
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TIC206M | Triacs | Inchange Semiconductor |
| Part Number | Description |
|---|---|
| TIC206A | (TIC206x) SILICON BIDIRECTIONAL TRIODE THYRISTOR |
| TIC206B | (TIC206x) SILICON BIDIRECTIONAL TRIODE THYRISTOR |
| TIC206D | (TIC206x) SILICON BIDIRECTIONAL TRIODE THYRISTOR |
| TIC206M | (TIC206x) SILICON BIDIRECTIONAL TRIODE THYRISTOR |
| TIC206S | (TIC206x) SILICON BIDIRECTIONAL TRIODE THYRISTOR |
| TIC216A | (TIC216x) SILICON TRIACS |
| TIC216B | (TIC216x) SILICON TRIACS |
| TIC216D | (TIC216x) SILICON TRIACS |
| TIC216M | (TIC216x) SILICON TRIACS |
| TIC216N | (TIC216x) SILICON TRIACS |