Datasheet Details
| Part number | TIC225A |
|---|---|
| Manufacturer | Comset Semiconductors |
| File Size | 215.34 KB |
| Description | (TIC225x) SILICON BIDIRECTIONAL TRIODE THYRISTOR |
| Download | TIC225A Download (PDF) |
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| Part number | TIC225A |
|---|---|
| Manufacturer | Comset Semiconductors |
| File Size | 215.34 KB |
| Description | (TIC225x) SILICON BIDIRECTIONAL TRIODE THYRISTOR |
| Download | TIC225A Download (PDF) |
|
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This device is a bidirectional triode thyristor (triac) which may be triggered from the off-state to the on-state by either polarity of gate signal with main Terminal 2 at either polarity.
ABSOLUTE MAXIMUM RATINGS http://www.DataSheet4U.net/ Symbol VDRM IT(RMS) ITSM ITSM IGM PGM PG(AV) TC Tstg TL Ratings A Repetitive peak off-state voltage (see Note1) Full-cycle RMS on-state current at (or below) 70°C case temperature (see note2) Peak on-state surge current full-sine-wave (see Note3) Peak on-state surge current half-sine-wave (see Note4) Peak gate current Peak gate power dissipation at (or below) 85°C case temperature (pulse width ≤200 µs) Average gate power dissipation at (or below) 85°C case (see Note5) Operating case temperature range Storage temperature range Lead temperature 1.6 mm from case for 10 seconds Value B C D E M S N Unit 100 200 300 400 500 600 700 800 8 70 8 ±1 2.2 0.9 -40 to +110 -40 to +125 230 V A A A A W W °C °C °C 30/10/2012 COMSET SEMICONDUCTORS 1|4 datasheet pdf - http://www.DataSheet4U.net/ SEMICONDUCTORS TIC225A, TIC225B, TIC225C, TIC225D, TIC225E, TIC225M, TIC225N, TIC225S THERMAL CHARACTERISTICS Symbol R∂JC R∂JA Ratings Junction to case thermal resistance Junction to free air thermal resistance Value ≤ 2.5 ≤ 62.5 Unit °C/W ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol IDRM Ratings Repetitive peak off-state current Gate trigger current Test Condition(s) VD = Rated VDRM, , IG = 0 TC = 110°C Vsupply = +12 V†, RL = 10 Ω, tp(g) = > 20 µs Vsupply = +12 V†, RL = 10 Ω, tp(g) = > 20 µs Vsupply = -12 V†, RL = 10 Ω, tp(g) = > 20 µs Vsupply = -12 V†, RL = 10 Ω, tp(g) = > 20 µs Vsupply = +12 V†, RL = 10 Ω, tp(g) = > 20
SEMICONDUCTORS TIC225A, TIC225B, TIC225C, TIC225D, TIC225E, TIC225M, TIC225N, TIC225S SILICON BIDIRECTIONAL TRIODE THYRISTOR • • • • • • • Sensitive gate triacs 8 A RMS 70 A Peak Glass Passivated Wafer 100 V to 800 V.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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TIC225 | SILICON TRIACS | BOURNS |
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TIC225 | SILICON TRIACS | Power Innovations Limited |
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TIC225 | Triac | INCHANGE |
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TIC225D | SILICON TRIACS | BOURNS |
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TIC225D | Triacs | Inchange Semiconductor |
| Part Number | Description |
|---|---|
| TIC225B | (TIC225x) SILICON BIDIRECTIONAL TRIODE THYRISTOR |
| TIC225C | (TIC225x) SILICON BIDIRECTIONAL TRIODE THYRISTOR |
| TIC225D | (TIC225x) SILICON BIDIRECTIONAL TRIODE THYRISTOR |
| TIC225E | (TIC225x) SILICON BIDIRECTIONAL TRIODE THYRISTOR |
| TIC225M | (TIC225x) SILICON BIDIRECTIONAL TRIODE THYRISTOR |
| TIC225N | (TIC225x) SILICON BIDIRECTIONAL TRIODE THYRISTOR |
| TIC225S | (TIC225x) SILICON BIDIRECTIONAL TRIODE THYRISTOR |
| TIC206A | (TIC206x) SILICON BIDIRECTIONAL TRIODE THYRISTOR |
| TIC206B | (TIC206x) SILICON BIDIRECTIONAL TRIODE THYRISTOR |
| TIC206D | (TIC206x) SILICON BIDIRECTIONAL TRIODE THYRISTOR |