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CMBT200 - PNP EPITAXIAL PLANAR SILICON TRANSISTOR

Description

SYMBOL VALUE VCBO 60 Collector -Base Voltage VCEO 45 Collector -Emitter Voltage VEBO 6.0 Emitter Base Voltage IC 500 Collector Current - Continuous PD 350 Power Dissipation 2.8 Derate Above=25 deg C Tj, Tstg -55 to +150 Operating And Storage Junction Temperature Range Thermal Resistance (Rth j-a) 35

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Datasheet Details

Part number CMBT200
Manufacturer Continental Device India Limited
File Size 204.45 KB
Description PNP EPITAXIAL PLANAR SILICON TRANSISTOR
Datasheet download datasheet CMBT200 Datasheet

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Full PDF Text Transcription

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www.datasheet4u.com Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company PNP EPITAXIAL PLANAR SILICON TRANSISTOR PIN CONFIGURATION (PNP) 1 = BASE 2 = EMITTER 3 = COLLECTOR CMBT200 CMBT200A SOT23 MARKING : AS BELOW 3 1 2 Designed for General Purpose Amplifier Applications. ABSOLUTE MAXIMUM RATINGS(Ta=25deg C unless otherwise noted) DESCRIPTION SYMBOL VALUE VCBO 60 Collector -Base Voltage VCEO 45 Collector -Emitter Voltage VEBO 6.0 Emitter Base Voltage IC 500 Collector Current - Continuous PD 350 Power Dissipation 2.
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