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CMBT200A - PNP EPITAXIAL PLANAR SILICON TRANSISTOR

Download the CMBT200A datasheet PDF. This datasheet also covers the CMBT200 variant, as both devices belong to the same pnp epitaxial planar silicon transistor family and are provided as variant models within a single manufacturer datasheet.

Description

SYMBOL VALUE VCBO 60 Collector -Base Voltage VCEO 45 Collector -Emitter Voltage VEBO 6.0 Emitter Base Voltage IC 500 Collector Current - Continuous PD 350 Power Dissipation 2.8 Derate Above=25 deg C Tj, Tstg -55 to +150 Operating And Storage Junction Temperature Range Thermal Resistance (Rth j-a) 35

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Note: The manufacturer provides a single datasheet file (CMBT200_ContinentalDeviceIndiaLimited.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number CMBT200A
Manufacturer Continental Device India Limited
File Size 204.45 KB
Description PNP EPITAXIAL PLANAR SILICON TRANSISTOR
Datasheet download datasheet CMBT200A Datasheet

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Other Datasheets by Continental Device India Limited

Part Number Description
CMBT200 PNP EPITAXIAL PLANAR SILICON TRANSISTOR
CMBD1201 SILICON PLANAR EPITAXIAL HIGH SPEED DIODES
CMBD1201 SILICON PLANAR EPITAXIAL HIGH SPEED DIODES
CMBD1202 SILICON PLANAR EPITAXIAL HIGH SPEED DIODES
CMBD1202 SILICON PLANAR EPITAXIAL HIGH SPEED DIODES

Full PDF Text Transcription

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www.datasheet4u.com Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company PNP EPITAXIAL PLANAR SILICON TRANSISTOR PIN CONFIGURATION (PNP) 1 = BASE 2 = EMITTER 3 = COLLECTOR CMBT200 CMBT200A SOT23 MARKING : AS BELOW 3 1 2 Designed for General Purpose Amplifier Applications. ABSOLUTE MAXIMUM RATINGS(Ta=25deg C unless otherwise noted) DESCRIPTION SYMBOL VALUE VCBO 60 Collector -Base Voltage VCEO 45 Collector -Emitter Voltage VEBO 6.0 Emitter Base Voltage IC 500 Collector Current - Continuous PD 350 Power Dissipation 2.
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