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Continental Device India Limited

CSD1489 Datasheet Preview

CSD1489 Datasheet

NPN EPITAXIAL PLANAR SILICON TRANSISTOR

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Continental Device India Limited
An IS/ISO 9002 and IECQ Certified Manufacturer
NPN EPITAXIAL PLANAR SILICON TRANSISTOR
IS/ISO 9002
IS / IECQC 700000
Lic# QSC/L- 000019.2 IS / IECQC 750100
CSD1489
TO-92
BCE
Low Frequency Power Amplifier.
Complementary CSB1058
ABSOLUTE MAXIMUM RATINGS(Ta=25deg C unless otherwise specified)
DESCRIPTION
SYMBOL
VALUE
Collector -Base Voltage
BVCBO
20
Collector Emitter Voltage
BVCEO
16
Emitter Base Voltage
BVEBO
6.0
Collector Current
IC
2.0
Collector Power Dissipation
PC
0.75
Operating And Storage Junction
Tj, Tstg
-55 to +150
Temperature Range
ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)
DESCRIPTION
SYMBOL TEST CONDITION
MIN
Collector -Base Voltage
BVCBO IC=10uA, IE=0
20
Collector Emitter Voltage
BVCEO IC=1mA, IB=0
16
Emitter Base Voltage
BVEBO IE=10uA, IC=0
6.0
Collector Cut off Current
ICBO
VCB=16V, IE=0
-
Emitter Cut off Current
IEBO
VEB=6V, IC=0
-
DC Current Gain
hFE *
VCE=2V, IC=0.1A
100
VCE=2V, IC=2A
75
Collector Emitter Saturation Voltage VCE(Sat) IC=1A, IB=0.1A
-
Dynamic Characteristics
Transition Frequency
ft
VCE=2V, IC=10mA,
-
Collector Output Capacitance
Cob VCB=10V, IE=0
-
f=1MHz
TYP
-
-
-
-
-
-
-
-
80
20
hFE* Classification :
A 100-240;
B 200-400; C 350-500
UNIT
V
V
V
A
W
deg C
MAX
-
-
-
2.0
0.2
500
-
0.3
-
-
UNIT
V
V
V
uA
uA
V
MHz
pF
Continental Device India Limited
Data Sheet
Page 1 of 3




Continental Device India Limited

CSD1489 Datasheet Preview

CSD1489 Datasheet

NPN EPITAXIAL PLANAR SILICON TRANSISTOR

No Preview Available !

www.datasheet4u.com
TO-92 Plastic Package
B
321
D AA
G
D
SEC AA
21
3
FF
321
PIN CONFIGURATION
1. BASE
2. COLLECTOR
3. EMITTER
DIM MIN. MAX.
A 4.32 5.33
B 4.45 5.20
C 3.18 4.19
D 0.41 0.55
E 0.35 0.50
F 5 DEG
G 1.14 1.40
H 1.14 1.53
K 12.70
TO-92 Transistors on Tape and Ammo Pack
M EC H AN IC AL D ATA
T
hh
A
P
A1
(p)
Ammo Pack Style
Ad hesive Tape o n Top Side
FLAT SIDE
LABEL
FEED
C arrier
Strip
8.2"
H1
H0
L
W2
Wo W1
W
t1
t
F1
F
P2
F2
Do
1.77"
Po
All dimensions in mm unless specified otherwise
13"
Flat S ide of Transistor and
Ad hesive Tape V isible
2000 pcs./A m m o P ack
ITEM
BODY WIDTH
BODY HEIGHT
BODY THICKNESS
PITCH OF COMPONENT
FEED HOLE PITCH
SYMBOL
A1
A
T
P
Po
FEED HOLE CENTRE TO
COMPONENT CENTRE
DISTANCE BETWEEN OUTER
LEADS
COMPONENT ALIGNMENT
TAPE W IDTH
HOLD-DOW N TAPE W IDTH
HOLE POSITION
P2
F
h
W
Wo
W1
HOLD-DOW N TAPE POSITION
LEAD WIRE CLINCH HEIGHT
COMPONENT HEIGHT
LENGTH OF SNIPPED LEADS
FEED HOLE DIAMETER
TO TAL TAPE TH ICKNESS
LEAD - TO - LEAD DISTANCEF1,
CLINCH HEIGHT
PULL - OUT FORCE
W2
Ho
H1
L
Do
t
F2
H2
(P)
S P EC IFIC AT IO N
MIN. NOM. MAX.
4.0
4.8
3.9
12.7
12.7
4.8
5.2
4.2
TOL .
±1
± 0.3
6.35 ± 0.4
+0.6
5.08 -0.2
01
18 ± 0.5
6 ± 0.2
9 +0.7
-0.5
0.5 ± 0.2
16 ± 0.5
23.25
11.0
4 ± 0.2
1.2
2.54 +0.4
-0.1
3
6N
REMARKS
CUMULATIVE PITCH
ERROR 1.0 mm/20
PITCH
TO BE MEASURED AT
BOTTOM OF CLINCH
AT TOP OF BODY
t1 0.3 - 0 .6
NOTES
1. M AXIM UM ALIGNM ENT DEVIATION BETW EEN LEADS NOT TO BE GREATER THAN 0.2 m m .
2. M AXIM UM NON-CUM ULATIVE VARIATION BETW EEN TAPE FEED HOLES SHALL NOT EXCEED 1 m m IN 20
P IT C H E S .
3. H OLD D OW N TAP E N O T TO E XC EE D B EY ON D T HE ED G E(S) O F CA RR IER TA PE AN D T HE RE S H ALL BE NO
EXPOSURE OF ADHESIVE.
4. NO M ORE THAN 3 CONSECUTIVE M ISSING COM PONENTS ARE PERM ITTED.
5. A TA PE TR A ILE R, H AVIN G AT LEA ST TH R EE F EED H OLE S A RE RE QU IR ED AFTE R T HE LAST CO M PO N EN T.
6. SPLICES SHALL NOT INTERFERE W ITH THE SPROCKET FEED HOLES.
Packing Detail
PACKAGE
STANDARD PACK
Details
Net Weight/Qty
TO-92 Bulk
TO-92 T&A
1K/polybag
200 gm/1K pcs
2K/ammo box 645 gm/2K pcs
INNER CARTON BOX
Size Qty
3" x 7.5" x 7.5"
12.5" x 8" x 1.8"
5.0K
2.0K
OUTER CARTON BOX
Size Qty Gr Wt
17" x 15" x 13.5"
17" x 15" x 13.5"
80.0K 23 kgs
32.0K 12.5 kgs
Continental Device India Limited
Data Sheet
Page 2 of 3


Part Number CSD1489
Description NPN EPITAXIAL PLANAR SILICON TRANSISTOR
Maker Continental Device India Limited
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