• Part: CSD1489
  • Description: NPN EPITAXIAL PLANAR SILICON TRANSISTOR
  • Category: Transistor
  • Manufacturer: Continental Device India Limited
  • Size: 92.26 KB
Download CSD1489 Datasheet PDF
Continental Device India Limited
CSD1489
DESCRIPTION SYMBOL VALUE BVCBO 20 Collector -Base Voltage BVCEO 16 Collector Emitter Voltage BVEBO 6.0 Emitter Base Voltage IC 2.0 Collector Current PC 0.75 Collector Power Dissipation Tj, Tstg -55 to +150 Operating And Storage Junction Temperature Range ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified) DESCRIPTION SYMBOL TEST CONDITION MIN BVCBO IC=10u A, IE=0 20 Collector -Base Voltage BVCEO IC=1m A, IB=0 16 Collector Emitter Voltage BVEBO IE=10u A, IC=0 6.0 Emitter Base Voltage ICBO VCB=16V, IE=0 Collector Cut off Current IEBO VEB=6V, IC=0 Emitter Cut off Current h FE - VCE=2V, IC=0.1A 100 DC Current Gain VCE=2V, IC=2A 75 VCE(Sat) IC=1A, IB=0.1A Collector Emitter Saturation Voltage Dynamic Characteristics ft VCE=2V, IC=10m A, Transition Frequency Cob VCB=10V, IE=0 Collector Output Capacitance f=1MHz h FE- Classification : A 100-240; B 200-400; C 350-500 UNIT V V V A W deg C TYP 80 20 MAX 2.0 0.2 500 0.3 - UNIT V V V u A u A V MHz p F Continental Device India...