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C2D10120D Datasheet Preview

C2D10120D Datasheet

Silicon Carbide Schottky Diode

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C2D10120D
Silicon Carbide Schottky Diode
Zero Recovery® Rectifier
Features
1.2kV Schottky Rectifier
Zero Reverse Recovery Current
Zero Forward Recovery Voltage
High-Frequency Operation
Temperature-Independent Switching Behavior
Extremely Fast Switching
Positive Temperature Coefficient on VF
Benefits
Replace Bipolar with Unipolar Rectifiers
Essentially No Switching Losses
Higher Efficiency
Reduction of Heat Sink Requirements
Parallel Devices Without Thermal Runaway
Applications
Switch Mode Power Supplies
Power Factor Correction
Motor Drives
Package
VRRM = 1200 V
IF (TC=135˚C) = 18 A**
Qc = 56 nC**
TO-247-3
Part Number
C2D10120D
Package
TO-247-3
Marking
C2D10120
Maximum Ratings (TC=25°C unless otherwise specified)
Symbol
Parameter
Value Unit
Test Conditions
Note
VRRM
Repetitive Peak Reverse Voltage
1200
V
VRSM
Surge Peak Reverse Voltage
1200
V
VDC DC Blocking Voltage
1200
V
IF
Continuous Forward Current (Per Leg/Device)
18/36
9/18
5/10
A TTTCCC===211535˚57C˚˚CC
IFRM Repetitive Peak Forward Surge Current
30* A TC=25˚C, tP=10 ms, Half Sine Wave
IFSM Non-Repetitive Peak Forward Surge Current
Ptot Power Dissipation (Per Leg/Device)
TJ , Tstg Operating Junction and Storage Temperature
TO-247 Mounting Torque
* Per Leg, ** Per Device
100*
A TC=25˚C, tP=10 µs, Pulse
138/276
60/120
W
TTCC==2151˚0C˚C
-55 to
+175
˚C
1
8.8
Nm
lbf-
in
M3 Screw
6-32 Screw
1 C2D10120D Rev. H
Free Datasheet http://www.nDatasheet.com




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C2D10120D Datasheet Preview

C2D10120D Datasheet

Silicon Carbide Schottky Diode

No Preview Available !

Electrical Characteristics (Per Leg)
Symbol
Parameter
Typ.
Max.
Unit
Test Conditions
VF Forward Voltage
IR Reverse Current
1.6 1.8
2.6 3.0
50 200
100 1000
V
μA
QC Total Capacitive Charge
28
nC
C Total Capacitance
455
45 pF
33
N1o. teT:his is a majority carrier diode, so there is no reverse recovery charge.
IIFF
=
=
5
5
A
A
TTJJ==2157°5C°C
VVRR
=
=
1200
1200
V
V
TTJJ==2157°5C°C
VdiR/d=t 1=205000V,AI/Fμ=s 5 A
TJ = 25°C
VVVRRR
=
=
=
0 V,
200
400
TV,J
V,
=
TTJJ
25°C, f = 1 MHz
= 25˚C, f = 1 MHz
= 25˚C, f = 1 MHz
Thermal Characteristics
Note
Symbol
Parameter
RθJC Thermal Resistance from Junction to Case
** Per Leg, * Both Legs
Typ.
1.08**
0.54*
Unit
°C/W
Typical Performance (Per Leg)
10
9
8
7
6
5
4
3
2
1
0
0
1.0 2.0 3.0 4.0 5.0
VF Forward Voltage (V)
200
180
160
140
120
100
80
60
40
20
0
0
500 1000
VR Reverse Voltage (V)
1500
Figure 1. Forward Characteristics
Figure 2. Reverse Characteristics
2 C2D10120D Rev. H
Free Datasheet http://www.nDatasheet.com


Part Number C2D10120D
Description Silicon Carbide Schottky Diode
Maker Cree
Total Page 6 Pages
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