900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf






Cree

C2M0080120D Datasheet Preview

C2M0080120D Datasheet

Silicon Carbide Power MOSFET

No Preview Available !

VDS 1200 V
C2M0080120D
Silicon Carbide Power MOSFET
TM
C2M MOSFET Technology
ID @ 25˚C
36 A
RDS(on) 80 m
N-Channel Enhancement Mode
Features
Package
High Blocking Voltage with Low On-Resistance
High Speed Switching with Low Capacitances
Easy to Parallel and Simple to Drive
Avalanche Ruggedness
Halogen Free, RoHS Compliant
Benefits
Higher System Efficiency
Reduced Cooling Requirements
Increased Power Density
Increased System Switching Frequency
TO-247-3
Applications
Solar Inverters
Switch Mode Power Supplies
High Voltage DC/DC Converters
Battery Chargers
Motor Drives
Pulsed Power applications
Part Number
C2M0080120D
Package
TO-247-3
Maximum Ratings (TC = 25 ˚C unless otherwise specified)
Symbol
Parameter
Value
Unit
Test Conditions
VDSmax
VGSmax
VGSop
Drain - Source Voltage
Gate - Source Voltage
Gate - Source Voltage
ID Continuous Drain Current
ID(pulse) Pulsed Drain Current
PD Power Dissipation
TJ , Tstg Operating Junction and Storage Temperature
TL Solder Temperature
Md Mounting Torque
1200
-10/+25
-5/+20
V VGS = 0 V, ID = 100 μA
V Absolute maximum values
V Recommended operational values
36 VGS = 20 V, TC = 25˚C
A
24 VGS = 20 V, TC = 100˚C
80 A Pulse width tP limited by Tjmax
192
-55 to
+150
W TC=25˚C, TJ = 150 ˚C
˚C
260 ˚C 1.6mm (0.063”) from case for 10s
1
8.8
Nm
lbf-in
M3 or 6-32 screw
Note
Fig. 19
Fig. 22
Fig. 20
1 C2M0080120D Rev. C, 10-2015




Cree

C2M0080120D Datasheet Preview

C2M0080120D Datasheet

Silicon Carbide Power MOSFET

No Preview Available !

Electrical Characteristics (TC = 25˚C unless otherwise specified)
Symbol
Parameter
Min.
Typ.
V(BR)DSS Drain-Source Breakdown Voltage
VGS(th)
Gate Threshold Voltage
1200
2.0
2.6
2.1
IDSS Zero Gate Voltage Drain Current
IGSS Gate-Source Leakage Current
RDS(on) Drain-Source On-State Resistance
gfs Transconductance
1
80
128
8.1
7.8
Ciss Input Capacitance
950
Coss Output Capacitance
80
Crss Reverse Transfer Capacitance
7.6
Eoss Coss Stored Energy
45
EAS Avalanche Energy, Single Pluse
1
EON Turn-On Switching Energy
265
EOFF Turn Off Switching Energy
135
td(on) Turn-On Delay Time
11
tr Rise Time
20
td(off)
Turn-Off Delay Time
23
tf
RG(int)
Qgs
Qgd
Qg
Fall Time
Internal Gate Resistance
Gate to Source Charge
Gate to Drain Charge
Total Gate Charge
19
4.6
15
23
62
Reverse Diode Characteristics
Symbol Parameter
Typ. Max.
VSD Diode Forward Voltage
3.3
3.1
IS Continuous Diode Forward Current
36
trr Reverse Recover time
32
Qrr Reverse Recovery Charge
192
Irrm Peak Reverse Recovery Current
10
Note (1): When using SiC Body Diode the maximum recommended VGS = -5V
Thermal Characteristics
Max.
4
100
250
98
Unit Test Conditions
V VGS = 0 V, ID = 100 μA
V VDS = VGS, ID = 5 mA
V VDS = VGS, ID = 5 mA, TJ = 150ºC
μA VDS = 1200 V, VGS = 0 V
nA VGS = 20 V, VDS = 0 V
VGS = 20 V, ID = 20 A
m
VGS = 20 V, ID = 20A, TJ = 150ºC
VDS= 20 V, IDS= 20 A
S
VDS= 20 V, IDS= 20 A, TJ = 150ºC
VGS = 0 V
pF VDS = 1000 V
f = 1 MHz
μJ VAC = 25 mV
J ID = 20A, VDD = 50V
μJ VDS = 800 V, VGS = -5/20 V, ID = 20A,
RG(ext) = 2.5Ω, L= 142 μH
VDD = 800 V, VGS = -5/20 V
ns
ID = 20 A, RG(ext) = 2.5 Ω,
RL = 40 Ω, Timing relative to VDS
Per IEC60747-8-4 pg 83
Ω f = 1 MHz, VAC = 25 mV
VDS = 800 V, VGS = -5/20 V
nC ID = 20 A
Per IEC60747-8-4 pg 21
Unit
V
V
A
ns
nC
A
Test Conditions
VGS = - 5 V, ISD = 10 A
VGS = - 5 V, ISD = 10 A, TJ = 150 °C
TC = 25˚C
VGS = - 5 V, ISD = 20 A, VR = 800 V
dif/dt = 2400 A/µs
Symbol
RθJC
RθJA
Parameter
Thermal Resistance from Junction to Case
Thermal Resistance From Junction to Ambient
Typ.
0.60
Max.
0.65
40
Unit
°C/W
Test Conditions
Note
Fig. 11
Fig. 4,
5, 6
Fig. 7
Fig. 17,
18
Fig. 16
Fig. 29
Fig. 25
Fig. 27
Fig. 12
Note
Fig. 8,
9, 10
Note 1
Note 1
Note
Fig. 21
2 C2M0080120D Rev. C, 10-2015


Part Number C2M0080120D
Description Silicon Carbide Power MOSFET
Maker Cree
Total Page 10 Pages
PDF Download

C2M0080120D Datasheet PDF

View PDF for Mobile








Similar Datasheet

1 C2M0080120D Silicon Carbide Power MOSFET
Cree





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy