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C2M0160120D Datasheet Preview

C2M0160120D Datasheet

Silicon Carbide Power MOSFET

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VDS
1200 V
C2M0160120D
Silicon Carbide Power MOSFET
TM
C2M MOSFET Technology
ID @ 25˚C
RDS(on)
19 A
160 m
N-Channel Enhancement Mode
Features
Package
High Blocking Voltage with Low On-Resistance
High Speed Switching with Low Capacitances
Easy to Parallel and Simple to Drive
Avalanche Ruggedness
Resistant to Latch-Up
Halogen Free, RoHS Compliant
Benefits
TO-247-3
Higher System Efficiency
Reduced Cooling Requirements
Increased Power Density
Increased System Switching Frequency
Applications
Solar Inverters
Switch Mode Power Supplies
High Voltage DC/DC Converters
LED Lighting Power Supplies
Part Number
C2M0160120D
Package
TO-247-3
Maximum Ratings (TC = 25 ˚C unless otherwise specified)
Symbol
Parameter
Value
Unit
Test Conditions
Note
VDSmax
VGSmax
VGSop
Drain - Source Voltage
Gate - Source Voltage
Gate - Source Voltage
ID Continuous Drain Current
1200
V VGS = 0 V, ID = 100 μA
-10/+25 V Absolute maximum values
-5/+20 V Recommended operational values
19
12.5
A VGS = 20 V, TC = 25˚C
VGS = 20 V, TC = 100˚C
Fig. 19
ID(pulse) Pulsed Drain Current
40 A Pulse width tP limited by Tjmax Fig. 22
PD Power Dissipation
TJ , Tstg Operating Junction and Storage Temperature
TL Solder Temperature
Md Mounting Torque
125
-55 to
+150
260
1
8.8
W TC=25˚C , TJ = 150 ˚C
˚C
Fig. 20
˚C 1.6mm (0.063”) from case for 10s
Nm
lbf-in
M3 or 6-32 screw
1 C2M0160120D Rev. C, 10-2015




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C2M0160120D Datasheet Preview

C2M0160120D Datasheet

Silicon Carbide Power MOSFET

No Preview Available !

Electrical Characteristics (TC = 25˚C unless otherwise specified)
Symbol
Parameter
Min. Typ. Max.
V(BR)DSS Drain-Source Breakdown Voltage
VGS(th) Gate Threshold Voltage
1200
2.0
2.6
2.1
4
IDSS
IGSS
RDS(on)
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
Drain-Source On-State Resistance
1 100
250
160 196
290
gfs Transconductance
4.8
4.3
Ciss Input Capacitance
525
Coss Output Capacitance
47
Crss Reverse Transfer Capacitance
4
Eoss Coss Stored Energy
25
EAS Avalanche Energy, Single Pluse
600
EON Turn-On Switching Energy
79
EOFF Turn Off Switching Energy
57
td(on)
Turn-On Delay Time
9
tr Rise Time
11
td(off)
Turn-Off Delay Time
16
tf
RG(int)
Qgs
Qgd
Qg
Fall Time
Internal Gate Resistance
Gate to Source Charge
Gate to Drain Charge
Total Gate Charge
10
6.5
7
14
34
Unit
V
V
V
μA
nA
m
S
Test Conditions
VGS = 0 V, ID = 100 μA
VDS = VGS, IDS = 2.5 mA
VDS = VGS, IDS = 2.5 mA, TJ = 150ºC
VDS = 1200 V, VGS = 0 V
VGS = 20 V, VDS = 0 V
VGS = 20 V, ID = 10 A
VGS = 20 V, ID = 10A, TJ = 150ºC
VDS= 20 V, IDS= 10 A
VDS= 20 V, IDS= 10 A, TJ = 150ºC
Note
Fig. 11
Fig. 4,
5, 6
Fig. 7
VGS = 0 V
pF VDS = 1000 V
f = 1 MHz
μJ VAC = 25 mV
Fig. 17,
18
Fig. 16
mJ ID = 10A, VDD = 50V
Fig. 29
μJ VDS = 800 V, VGS = -5/20 V, ID = 10A, Fig. 25
RG(ext) = 2.5Ω, L= 256 μH
VDD = 800 V, VGS = -5/20 V
ID = 10 A
ns RG(ext) = 2.5 Ω, RL = 80 Ω
Timing relative to VDS
Per IEC60747-8-4 pg 83
Ω f = 1 MHz, VAC = 25 mV
VDS = 800 V, VGS = -5/20 V
nC ID = 10 A
Per IEC60747-8-4 pg 21
Fig. 27
Fig. 12
Reverse Diode Characteristics
Symbol Parameter
VSD Diode Forward Voltage
IS Continuous Diode Forward Current
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Irrm Peak Reverse Recovery Current
Typ.
3.3
3.1
23
105
9
Max.
19
Unit
V
A
ns
nC
A
Note (1): When using SiC Body Diode the maximum recommended VGS = -5V
Thermal Characteristics
Test Conditions
VGS = -5 V, IF=5 A
VGS = -5V, IF=5 A, TJ = 150 ºC
TC = 25˚C
VGS = - 5 V, ISD = 10 A, VR = 800 V
dif/dt = 3200 A/µs
Symbol
RθJC
RθJA
Parameter
Thermal Resistance from Junction to Case
Thermal Resistance From Junction to Ambient
Typ.
0.9
Max.
1.0
40
Unit
K/W
Test Conditions
Note
Fig. 8,9,
10
Note 1
Note 1
Note
Fig. 21
2 C2M0160120D Rev. C, 10-2015


Part Number C2M0160120D
Description Silicon Carbide Power MOSFET
Maker Cree
Total Page 10 Pages
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