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C2M0160120D - Silicon Carbide Power MOSFET

Features

  • Package.
  • High Blocking Voltage with Low On-Resistance.
  • High Speed Switching with Low Capacitances.
  • Easy to Parallel and Simple to Drive.
  • Avalanche Ruggedness.
  • Resistant to Latch-Up.
  • Halogen Free, RoHS Compliant Benefits TO-247-3.
  • Higher System Efficiency.
  • Reduced Cooling Requirements.
  • Increased Power Density.
  • Increased System Switching Frequency.

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Full PDF Text Transcription

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VDS 1200 V C2M0160120D Silicon Carbide Power MOSFET TM C2M MOSFET Technology ID @ 25˚C RDS(on) 18 A 160 mΩ N-Channel Enhancement Mode Features Package • High Blocking Voltage with Low On-Resistance • High Speed Switching with Low Capacitances • Easy to Parallel and Simple to Drive • Avalanche Ruggedness • Resistant to Latch-Up • Halogen Free, RoHS Compliant Benefits TO-247-3 • Higher System Efficiency • Reduced Cooling Requirements • Increased Power Density • Increased System Switching Frequency Applications • Solar Inverters • Switch Mode Power Supplies • High Voltage DC/DC Converters • LED Lighting Power Supplies Part Number C2M0160120D Package TO-247-3 Maximum Ratings (TC = 25 ˚C unless otherwise specified) Symbol Parameter Value Unit Test Conditions
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