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C3D02060F Datasheet Preview

C3D02060F Datasheet

Silicon Carbide Schottky Diode

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C3D02060F
Silicon Carbide Schottky Diode
Z-RecRectifier (Full-Pak)
Features
600-Volt Schottky Rectifier
Optimized for PFC Boost Diode Application
Zero Reverse Recovery Current
Zero Forward Recovery Voltage
High-Frequency Operation
Temperature-Independent Switching Behavior
Extremely Fast Switching
Positive Temperature
Fully Isolated Case
Coefficient
on
VF
Benefits
Replace Bipolar with Unipolar Rectifiers
Essentially No Switching Losses
Higher Efficiency
Reduction of Heat Sink Requirements
No Additional Isolation Required
Applications
Switch Mode Power Supplies
Power Factor Correction
- Typical
Motor Drives
PFC
Pout
:
150W-300W
Package
VRRM =
600 V
IF (TC=128˚C) = 2 A
Qc =
4.8 nC
TO-220-F2
PIN 1
PIN 2
CASE
Part Number
C3D02060F
Package
TO-220-F2
Marking
C3D02060
Maximum Ratings (TC = 25 ˚C unless otherwise specified)
Symbol
Parameter
Value Unit
Test Conditions
VRRM
VRSM
VDC
IF
IFRM
IFSM
IFSM
Ptot
TJ , Tstg
Repetitive Peak Reverse Voltage
Surge Peak Reverse Voltage
DC Blocking Voltage
Continuous Forward Current
Repetitive Peak Forward Surge Current
Non-Repetitive Peak Forward Surge Current
Non-Repetitive Peak Forward Surge Current
Power Dissipation
Operating Junction and Storage Temperature
TO-220 Mounting Torque
600
600
600
4
2
1.8
12
8
20
16
65
10.8
4.7
-55 to
+175
1
8.8
V
V
V
A TTTCCC===211523˚85C˚˚CC
A TTCC==2151˚0C˚C, ,tPt=P =1100mms,s,HHalaflfSSinieneWWavaev,e,DD==00.3.3
A TTCC==2151˚0C˚C, ,tPt=p =1010mms,SH, aHlfalSfiSneineWaWvaev,eD, =D0=.03.3
A TC=25˚C, tP = 10 µs, Pulse
W TTCC==2151˚0C˚C
˚C
Nm M3 Screw
lbf-in 6-32 Screw
Note
1 C3D02060F Rev. D
Free Datasheet http://www.nDatasheet.com




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C3D02060F Datasheet Preview

C3D02060F Datasheet

Silicon Carbide Schottky Diode

No Preview Available !

Electrical Characteristics
Symbol
Parameter
Typ.
Max.
Unit
Test Conditions
VF Forward Voltage
IR Reverse Current
1.5 1.7
1.8 2.4
V
10
20
50
100
μA
QC Total Capacitive Charge
4.8
nC
C Total Capacitance
120
12 pF
11
Note:
1. This is a majority carrier diode, so there is no reverse recovery charge.
IIFF
=
=
2
2
AA TTJJ==2157°5C°C
VVRR
=
=
600
600
V
V
TTJJ==2157°5C°C
VdiR/d=t
600 V,
= 500
IAF/=μs2A
TJ = 25°C
VVVRRR
=
=
=
0 V,
200
400
TV,J
V,
=
TTJJ
25°C, f = 1 MHz
= 25˚C, f = 1 MHz
= 25˚C, f = 1 MHz
Thermal Characteristics
Note
Symbol Parameter
RθJC Thermal Resistance from Junction to Case
Typ.
13.8
Unit
°C/W
Typical Performance
4.04.0
3.53.5
3.03.0
TTTTJJJJ
=
=
=
=
25°C
75°C
125°C
175°C
2.52.5
2.02.0
1.51.5
1.01.0
0.50.5
00.0
00..00
0.0.55 11..00 11..55
22..00
VF ForwVFaFrodrwVarodlVtoalgtaege((VV))
22..55
66
55
44
D1_25C
D1_75C
D1_125C
D1_175C
33
22
11
TJ = 25°C
TJ = 75°C
TJ = 125°C
TJ = 175°C
Current(A)
D2_75C
D2_125C
D2_175C
00
33..00 00 101000 202000 303000 404000 505000 606000 707000 880000 990000
VR VRReRveeverrssee VVooltaltgaeg(Ve) (V)
Figure 1. Forward Characteristics
Figure 2. Reverse Characteristics
2 C3D02060F Rev. D
Free Datasheet http://www.nDatasheet.com


Part Number C3D02060F
Description Silicon Carbide Schottky Diode
Maker Cree
Total Page 6 Pages
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