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C3D03060A Datasheet Preview

C3D03060A Datasheet

Silicon Carbide Schottky Diode

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C3D03060A
Silicon Carbide Schottky Diode
Z-RecRectifier
Features
600-Volt Schottky Rectifier
Optimized for PFC Boost Diode Application
Zero Reverse Recovery Current
Zero Forward Recovery Voltage
High-Frequency Operation
Temperature-Independent Switching Behavior
Extremely Fast Switching
Positive Temperature Coefficient on VF
Benefits
Replace Bipolar with Unipolar Rectifiers
Essentially No Switching Losses
Higher Efficiency
Reduction of Heat Sink Requirements
Parallel Devices Without Thermal Runaway
Applications
Switch Mode Power Supplies
Power Factor Correction
- Typical PFC Pout : 300W-450W
Package
TO-220-2
PIN 1
PIN 2
Part Number
C3D03060A
VRRM = 600 V
IF (TC=135˚C) = 5.5 A
Qc = 6.7 nC
CASE
Package
TO-220-2
Marking
C3D03060
Maximum Ratings (TC = 25 ˚C unless otherwise specified)
Symbol Parameter
Value Unit
Test Conditions
Note
VRRM
VRSM
VDC
IF
IFRM
IFSM
IFSM
Ptot
TJ , Tstg
Repetitive Peak Reverse Voltage
Surge Peak Reverse Voltage
DC Blocking Voltage
Continuous Forward Current
Repetitive Peak Forward Surge Current
Non-Repetitive Peak Forward Surge Current
Non-Repetitive Peak Forward Surge Current
Power Dissipation
Operating Junction and Storage Temperature
TO-220 Mounting Torque
600
600
600
11.5
5.5
3
18
13.5
26
23
100
53
23
-55 to
+175
1
8.8
V
V
V
A TTTCCC===2116530˚5˚CC
A TTCC==2151˚0C˚C, ,tPt=P=1100mmSS, ,HHalaflfSSinieneWWavaeveDD==00.3.3
A TTCC==2151˚0C˚C, ,tPt=P=1100mmSS, ,HHalaflfSSinieneWWavaeveDD==00.3.3
A TC=25˚C, tP=10 µS, Pulse
W TTCC==2151˚0C˚C
˚C
Nm
lbf-in
M3 Screw
6-32 Screw
1 C3D03060A Rev. D
Free Datasheet http://www.nDatasheet.com




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C3D03060A Datasheet Preview

C3D03060A Datasheet

Silicon Carbide Schottky Diode

No Preview Available !

Electrical Characteristics
Symbol Parameter
Typ. Max. Unit
Test Conditions
VF Forward Voltage
1.5 1.7
1.8 2.4
V
IIFF
=
=
3
3
AA TTJJ==2157°5C°C
IR Reverse Current
10 50
20 100
μA
VVRR
=
=
600
600
V
V
TTJJ==2157°5C°C
QC Total Capacitive Charge
6.7
nC
VdiR/d=t
600 V,
= 500
IAF/=μS3A
TJ = 25°C
C Total Capacitance
155
13
12
pF
VVVRRR
=
=
=
0 V,
200
400
TV,J
V,
=
TTJJ
25°C, f = 1 MHz
= 25˚C, f = 1 MHz
= 25˚C, f = 1 MHz
Note:
1. This is a majority carrier diode, so there is no reverse recovery charge.
Thermal Characteristics
Symbol Parameter
RθJC TO-220 Package Thermal Resistance from Junction to Case
Typ.
2.8
Unit
°C/W
Note
Typical Performance
6.06.0
5.05.0
4.04.0
TTTTJJJJ
=
=
=
=
25°C
75°C
125°C
175°C
3.03.0
2.02.0
1.01.0
1.4E1-045
1.2E1-025
1.0E1-005
8.0E-086
Current 25C
Current 765.C0E-066
Current 125C
Current 175C
4.0E-046
2.0E-026
TJ = 25°C
TJ = 75°C
TJ = 125°C
TJ = 175°
Current 25C
Current 75C
Current 125
Current 175
00.0
00..00
00..55 11..00 11..55 22..00 22..55 33..00
VF ForwarFdorwVardoVlotltaagege (V)
Figure 1. Forward Characteristics
0.0E+000
00 110000 220000 330000 440000 550000 660000 770000 808000
VR RevReevresrsee BViaso(Vlt)age (V)
Figure 2. Reverse Characteristics
2 C3D03060A Rev. D
Free Datasheet http://www.nDatasheet.com


Part Number C3D03060A
Description Silicon Carbide Schottky Diode
Maker Cree
Total Page 6 Pages
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