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C3D20060D Datasheet Preview

C3D20060D Datasheet

Silicon Carbide Schottky Diode

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C3D20060D
Silicon Carbide Schottky Diode
Z-Rec® Rectifier
Features
Package
600-Volt Schottky Rectifier
Zero Reverse Recovery Current
Zero Forward Recovery Voltage
High-Frequency Operation
Temperature-Independent Switching Behavior
Extremely Fast Switching
Positive Temperature Coefficient on VF
Benefits
TO-247-3
Replace Bipolar with Unipolar Rectifiers
Essentially No Switching Losses
Higher Efficiency
Reduction of Heat Sink Requirements
Parallel Devices Without Thermal Runaway
Applications
Switch Mode Power Supplies (SMPS)
Boost diodes in PFC or DC/DC stages
Free Wheeling Diodes in Inverter stages
AC/DC converters
Part Number
C3D20060D
Maximum Ratings (TC = 25 ˚C unless otherwise specified)
Symbol
Parameter
Value Unit
VRRM =  600 V
IF (TC=135˚C) = 26 A**
Qc = 48 nC**
Package
TO-247-3
Marking
C3D20060
Test Conditions
Note
VRRM
Repetitive Peak Reverse Voltage
600
VRSM
Surge Peak Reverse Voltage
600
VDC DC Blocking Voltage
IF
Continuous Forward Current
(Per Leg/Device)
IFRM
IFSM
IFSM
Ptot
dV/dt
Repetitive Peak Forward Surge Current
Non-Repetitive Peak Forward Surge Current
Non-Repetitive Peak Forward Surge Current
Power Dissipation (Per Leg/Device)
Diode dV/dt ruggedness
TJ , Tstg Operating Junction and Storage Temperature
TO-247 Mounting Torque
* Per Leg, ** Per Device
600
27.5/55
13/26
10/20
46*
31*
90*
71*
860*
680*
136.5
59
200
-55 to
+175
1
8.8
V
V
V
A
A
A
A
W
V/ns
TC=25˚C
TC=135˚C
TC=149˚C
TC=25˚C, tP = 10 ms, Half Sine Wave
TC=110˚C, tP=10 ms, Half Sine Wave
TC=25˚C, tp = 10 ms, Half Sine Wave
TC=110˚C, tp = 10 ms, Half Sine Wave
TC=25˚C, tP = 10 µs, Pulse
TC=110˚C, tP = 10 µs, Pulse
TC=25˚C
TC=110˚C
VR=0-650V
˚C
Nm M3 Screw
lbf-in 6-32 Screw
Fig. 3
Fig. 8
Fig. 8
Fig. 4
1 C3D20060D Rev. E, 03-2016




Cree

C3D20060D Datasheet Preview

C3D20060D Datasheet

Silicon Carbide Schottky Diode

No Preview Available !

Electrical Characteristics (Per Leg)
Symbol
Parameter
Typ. Max. Unit
Test Conditions
VF Forward Voltage
IR Reverse Current
QC Total Capacitive Charge
C Total Capacitance
1.5
2.0
10
20
24
460.5
44
40
1.8
2.4
50
200
V
IF = 10 A TJ=25°C
IF = 10 A TJ=175°C
μA
VR = 600 V TJ=25°C
VR = 600 V TJ=175°C
VR = 400 V, IF = 10 A
nC di/dt = 500 A/μs
TJ = 25°C
VR = 0 V, TJ = 25°C, f = 1 MHz
pF VR = 200 V, TJ = 25˚C, f = 1 MHz
VR = 400 V, TJ = 25˚C, f = 1 MHz
EC Capacitance Stored Energy
3.6
μJ VR = 400 V
Note: This is a majority carrier diode, so there is no reverse recovery charge.
Thermal Characteristics
Symbol Parameter
RθJC Thermal Resistance from Junction to Case
** Per Leg, * Both Legs
Typ.
1.3**
0.65*
Unit
°C/W
Note
Fig. 9
Note
Fig. 1
Fig. 2
Fig. 5
Fig. 6
Fig. 7
Typical Performance (Per Leg)
30
25 TJ = -55 °C
TJ = 25 °C
20 TJ = 75 °C
TJ = 125 °C
15
TJ = 175 °C
10
5
0
0 2000.0 400.50 1 .6000 1 . 5 8002 . 0 1020.05 132.000 3 . 5 4.0 4.5 5.0
FowardVVFol(taVg)e, VF (V)
Figure 1. Forward Characteristics
100
90
80
70
60 TJ = 175 °C
50 TJ = 125 °C
40 TJ = 75 °C
30 TJ = 25 °C
20 TJ = -55 °C
10
0
0 100 200 300 400 500 600 700 800 900 1000
ReverseVVRolt(aVge), VR (V)
Figure 2. Reverse Characteristics
2 C3D20060D Rev. E, 03-2016


Part Number C3D20060D
Description Silicon Carbide Schottky Diode
Maker Cree
Total Page 6 Pages
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